Datasheet GAN063-650WSA (Nexperia)

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GAN063-650WSA 650 V, 50 mΩ Gal ium Nitride (GaN) FET 27 November 2019 Product data sheet 1. General description
The GAN063-650WSA is a 650 V, 50 mΩ Gal ium Nitride (GaN) FET. It is a normal y-of device that combines Nexperia’s state-of-the-art high-voltage GaN HEMT and low-voltage silicon MOSFET technologies — of ering superior reliability and performance. AEC-Q101 qualified.
2. Features and benefits
• Ultra-low reverse recovery charge • Simple gate drive (0 V to +10 V or 12 V) • Robust gate oxide (±20 V capability) • High gate threshold voltage (+4 V) for very good gate bounce immunity • Very low source-drain voltage in reverse conduction mode • Transient over-voltage capability (800 V) • AEC-Q101 qualified
3. Applications
• Hard and soft switching converters for industrial and datacom power • Bridgeless totempole PFC • PV and UPS inverters • Servo motor drives
4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage -55 °C ≤ Tj ≤ 175 °C - - 650 V ID drain current VGS = 10 V; Tmb = 25 °C; Fig. 2 - - 34.5 A Ptot total power dissipation Tmb = 25 °C; Fig. 1 - - 143 W Tj junction temperature -55 - 175 °C
Static characteristics
RDSon drain-source on-state VGS = 10 V; ID = 25 A; Tj = 25 °C - 50 60 mΩ resistance
Dynamic characteristics
QGD gate-drain charge ID = 25 A; VDS = 400 V; VGS = 10 V; - 4 - nC Q T G(tot) total gate charge j = 25 °C - 15 - nC
Source-drain diode
Qr recovered charge IS = 25 A; dIS/dt = -1000 A/µs; - 125 - nC VGS = 0 V; VDS = 400 V; Fig. 14 Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Application information 12. Package outline 13. Legal information Contents