Datasheet BF256A, BF256B, BF256C (Fairchild)

BF256A/ B BF256A/BF256B/BF256C F 2 5 6 B/BF256C N-Channel RF Amplifiers
• This device is designed for VHF/UHF amplifiers. • Sourced from process 50. TO-92 1 1. Gate 2. Source 3. Drain
Absolute Maximum Ratings
Ta=25°C unless otherwise noted
Symbol Parameter Value Units
VDG Drain-Gate Voltage 30 V VGS Gate-Source Voltage -30 V IGF Forward Gate Current 10 mA PD Total Device Dissipation @TA=25°C 350 mW Derate above 25°C 2.8 mW/°C TSTG Operating and storage Temperature Range - 55 ~ 150 °C
Electrical Characteristics
Ta=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Max. Units Off Characteristics
V(BR)GSS Gate-Source Breakdown Voltage VDS = 0, IG = 1µA -30 V VGS Gate-Source VDS = 15V, ID = 200µA -0.5 -7.5 V VGS(off) Gate-Source Cutoff Voltage VDS = 15V, ID = 10nA -0.5 -8 V IGSS Gate Reverse Current VGS = -20V, VGS = 0 -5 nA
On Characteristics
IDSS Zero-Gate Voltage Drain Current BF256A VGS = 15V, VGS = 0 3 7 mA BF256B 6 13 BF256C 11 18
Small Signal Characteristics
gfs Common Source Forward Transconductance VDS = 15V, VGS = 0, f = 1KHz 4.5 mmhos ©2003 Fairchild Semiconductor Corporation Rev. A, June 2003