Datasheet MTD20P06HDL (Motorola) - 3
| Fabricante | Motorola |
| Descripción | P–Channel Enhancement–Mode Silicon Gate |
| Páginas / Página | 12 / 3 — TYPICAL ELECTRICAL CHARACTERISTICS. Figure 1. On–Region Characteristics. … |
| Formato / tamaño de archivo | PDF / 318 Kb |
| Idioma del documento | Inglés |
TYPICAL ELECTRICAL CHARACTERISTICS. Figure 1. On–Region Characteristics. Figure 2. Transfer Characteristics
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MTD20P06HDL
TYPICAL ELECTRICAL CHARACTERISTICS
30 30 T V 9 V V J = 25°C GS = 10 V DS ≥ 5 V 8 V 25 25 25°C TJ = – 55°C 20 7 V (AMPS) 20 (AMPS) 100°C 15 15 6 V 10 10 5 V , DRAIN CURRENT , DRAIN CURRENT I D I D 5 5 4 V 0 0 0 1 2 3 4 5 6 7 8 9 10 1 2 3 4 5 6 VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics Figure 2. Transfer Characteristics
0.40 0.275 VGS = 5 V TJ = 25°C 0.250 ANCE (OHMS) 0.32 ANCE (OHMS) 0.225 0.24 0.200 TJ = 100°C 25°C 0.175 0.16 O–SOURCE RESIST O–SOURCE RESIST VGS = 5 V – 55°C 0.150 0.08 , DRAIN–T , DRAIN–T 0.125 10 V DS(on) 0 DS(on) 0.100 R R 0 5 10 15 20 25 30 0 5 10 15 20 25 30 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current Figure 4. On–Resistance versus Drain Current and Temperature and Gate Voltage
1.8 100 V V ANCE GS = 5 V GS = 0 V 1.6 ID = 7.5 A 1.4 1.2 TJ = 125°C 1 O–SOURCE RESIST 10 100°C 0.8 (NORMALIZED) , LEAKAGE (nA) 0.6 , DRAIN–T I DSS 0.4 DS(on) 0.2 R 0 1 – 50 – 25 0 25 50 75 100 125 150 0 10 20 30 40 50 60 T V J, JUNCTION TEMPERATURE (°C) DS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 5. On–Resistance Variation with Figure 6. Drain–To–Source Leakage Temperature Current versus Voltage
Motorola TMOS Power MOSFET Transistor Device Data 3
TYPICAL ELECTRICAL CHARACTERISTICS
30 30 T V 9 V V J = 25°C GS = 10 V DS ≥ 5 V 8 V 25 25 25°C TJ = – 55°C 20 7 V (AMPS) 20 (AMPS) 100°C 15 15 6 V 10 10 5 V , DRAIN CURRENT , DRAIN CURRENT I D I D 5 5 4 V 0 0 0 1 2 3 4 5 6 7 8 9 10 1 2 3 4 5 6 VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics Figure 2. Transfer Characteristics
0.40 0.275 VGS = 5 V TJ = 25°C 0.250 ANCE (OHMS) 0.32 ANCE (OHMS) 0.225 0.24 0.200 TJ = 100°C 25°C 0.175 0.16 O–SOURCE RESIST O–SOURCE RESIST VGS = 5 V – 55°C 0.150 0.08 , DRAIN–T , DRAIN–T 0.125 10 V DS(on) 0 DS(on) 0.100 R R 0 5 10 15 20 25 30 0 5 10 15 20 25 30 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current Figure 4. On–Resistance versus Drain Current and Temperature and Gate Voltage
1.8 100 V V ANCE GS = 5 V GS = 0 V 1.6 ID = 7.5 A 1.4 1.2 TJ = 125°C 1 O–SOURCE RESIST 10 100°C 0.8 (NORMALIZED) , LEAKAGE (nA) 0.6 , DRAIN–T I DSS 0.4 DS(on) 0.2 R 0 1 – 50 – 25 0 25 50 75 100 125 150 0 10 20 30 40 50 60 T V J, JUNCTION TEMPERATURE (°C) DS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 5. On–Resistance Variation with Figure 6. Drain–To–Source Leakage Temperature Current versus Voltage
Motorola TMOS Power MOSFET Transistor Device Data 3