Datasheet IPB230N06L3 G, IPP230N06L3 G (Infineon) - 3

IPB230N06L3 G IPP230N06L3 G Parameter Symbol Conditions Values Unit min. typ. max. Dynamic characteristics
Input capacitance C iss - 1200 1600 pF V Output capacitance C GS=0 V, V DS=30 V, oss - 270 - f =1 MHz Reverse transfer capacitance C rss - 16 - Turn-on delay time t d(on) - 9 - ns Rise time t r - 3 - V DD=30 V, V GS=10 V, Turn-off delay time t I D=30 A, R G=3 Ω d(off) - 19 - Fall time t f - 3 - Gate Charge Characteristics5) Gate to source charge Q gs - 5 - nC Gate to drain charge Q gd - 2 - V Switching charge DD=30 V, I D=30 A, Q sw - 5 - V GS=0 to 4.5 V Gate charge total Q g - 7 10 Gate plateau voltage V plateau - 4.2 - V Output charge Q oss V DD=30 V, V GS=0 V - 13 17 nC
Reverse Diode
Diode continous forward current I S - - 30 A T C=25 °C Diode pulse current I S,pulse - - 120 V Diode forward voltage GS=0 V, I F=30 A, V SD - 1.0 1.2 V T j=25 °C Reverse recovery time t rr - 27 - ns V R=30 V, I F=30A, Reverse recovery charge di Q F/dt =100 A/µs rr - 23 - nC 5) See figure 16 for gate charge parameter definition Rev. 2.2 page 3 2010-01-22