Datasheet STW88N65M5-4 (STMicroelectronics)
| Fabricante | STMicroelectronics |
| Descripción | N-channel 650 V, 0.024 Ω typ., 84 A, MDmesh M5 Power MOSFET in a TO247-4 package |
| Páginas / Página | 13 / 1 — STW88N65M5-4. Datasheet — production data. Features. Order code. DS(on) … |
| Formato / tamaño de archivo | PDF / 723 Kb |
| Idioma del documento | Inglés |
STW88N65M5-4. Datasheet — production data. Features. Order code. DS(on) max. jmax. TO247-4. Applications
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STW88N65M5-4
N-channel 650 V, 0.024 Ω typ., 84 A, MDmesh™ M5 Power MOSFET in a TO247-4 package
Datasheet — production data Features V Order code DS R @T DS(on) max. ID jmax.
STW88N65M5-4 710 V 0.029 Ω 84 A • Higher VDS rating • Higher dv/dt capability 4 3 • Excellent switching performance thanks to the 2 1 extra driving source pin
TO247-4
• Easy to drive • 100% avalanche tested
Applications Figure 1. Internal schematic diagram
• High efficiency switching applications: 'UDLQ – Servers – PV inverters – Telecom infrastructure – Multi kW battery chargers *DWH
Description
This device is an N-channel Power MOSFET 'ULYHU based on MDmesh™ M5 innovative vertical VRXUFH process technology combined with the well- 3RZHU known PowerMESH™ horizontal layout. The VRXUFH resulting product offers extremely low on- $0Y resistance, making it particularly suitable for applications requiring high power and superior efficiency.
Table 1. Device summary Order code Marking Package Packing
STW88N65M5-4 88N65M5 TO247-4 Tube October 2015 Doc ID 027754 Rev 1 1/13 This is information on a product in full production. www.st.com Document Outline Figure 1. Internal schematic diagram Table 1. Device summary 1 Electrical ratings Table 2. Absolute maximum ratings Table 3. Thermal data 2 Electrical characteristics Table 4. Static Table 5. Dynamic Table 6. Switching times Table 7. Source-drain diode 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Gate charge vs gate-source voltage Figure 7. Static drain-source on-resistance Figure 8. Capacitance variations Figure 9. Output capacitance stored energy Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on-resistance vs temperature Figure 12. Source-drain diode forward characteristics Figure 13. Normalized V(BR)DSS vs temperature Figure 14. Switching losses vs gate resistance 3 Test circuits Figure 15. Switching times test circuit for resistive load Figure 16. Gate charge test circuit Figure 17. Test circuit for inductive load switching and diode recovery times Figure 18. Unclamped inductive load test circuit Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform 4 Package information 4.1 TO247-4 package information Figure 21. TO247-4 package outline Table 8. TO247-4 package mechanical data 5 Revision history Table 9. Document revision history
N-channel 650 V, 0.024 Ω typ., 84 A, MDmesh™ M5 Power MOSFET in a TO247-4 package
Datasheet — production data Features V Order code DS R @T DS(on) max. ID jmax.
STW88N65M5-4 710 V 0.029 Ω 84 A • Higher VDS rating • Higher dv/dt capability 4 3 • Excellent switching performance thanks to the 2 1 extra driving source pin
TO247-4
• Easy to drive • 100% avalanche tested
Applications Figure 1. Internal schematic diagram
• High efficiency switching applications: 'UDLQ – Servers – PV inverters – Telecom infrastructure – Multi kW battery chargers *DWH
Description
This device is an N-channel Power MOSFET 'ULYHU based on MDmesh™ M5 innovative vertical VRXUFH process technology combined with the well- 3RZHU known PowerMESH™ horizontal layout. The VRXUFH resulting product offers extremely low on- $0Y resistance, making it particularly suitable for applications requiring high power and superior efficiency.
Table 1. Device summary Order code Marking Package Packing
STW88N65M5-4 88N65M5 TO247-4 Tube October 2015 Doc ID 027754 Rev 1 1/13 This is information on a product in full production. www.st.com Document Outline Figure 1. Internal schematic diagram Table 1. Device summary 1 Electrical ratings Table 2. Absolute maximum ratings Table 3. Thermal data 2 Electrical characteristics Table 4. Static Table 5. Dynamic Table 6. Switching times Table 7. Source-drain diode 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Gate charge vs gate-source voltage Figure 7. Static drain-source on-resistance Figure 8. Capacitance variations Figure 9. Output capacitance stored energy Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on-resistance vs temperature Figure 12. Source-drain diode forward characteristics Figure 13. Normalized V(BR)DSS vs temperature Figure 14. Switching losses vs gate resistance 3 Test circuits Figure 15. Switching times test circuit for resistive load Figure 16. Gate charge test circuit Figure 17. Test circuit for inductive load switching and diode recovery times Figure 18. Unclamped inductive load test circuit Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform 4 Package information 4.1 TO247-4 package information Figure 21. TO247-4 package outline Table 8. TO247-4 package mechanical data 5 Revision history Table 9. Document revision history