Datasheet STW88N65M5, STWA88N65M5 (STMicroelectronics) - 9

FabricanteSTMicroelectronics
DescripciónN-channel 650 V, 0.024 Ω typ., 84 A, MDmesh V Power MOSFETs in TO-247 and TO-247 long leads packages
Páginas / Página16 / 9 — STW88N65M5, STWA88N65M5. Test circuits. Figure 15. Switching times test …
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STW88N65M5, STWA88N65M5. Test circuits. Figure 15. Switching times test circuit for. Figure 16. Gate charge test circuit

STW88N65M5, STWA88N65M5 Test circuits Figure 15 Switching times test circuit for Figure 16 Gate charge test circuit

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STW88N65M5, STWA88N65M5 Test circuits 3 Test circuits Figure 15. Switching times test circuit for Figure 16. Gate charge test circuit resistive load
VDD 12V 47kΩ 1kΩ 100nF R 2200 3.3 L μF μF VDD IG=CONST VD Vi=20V=VGMAX 100Ω D.U.T. VGS 2200 RG D.U.T. μF 2.7kΩ VG PW 47kΩ 1kΩ PW AM01468v1 AM01469v1
Figure 17. Test circuit for inductive load Figure 18. Unclamped inductive load test circuit switching and diode recovery times
L A A A D FAST L=100μH VD G D.U.T. DIODE 2200 3.3 μF μF VDD S B 3.3 1000 B B μF μF 25 Ω VDD D ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1
Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform
V(BR)DSS &RQFHSWZDYHIRUPIRU,QGXFWLYH/RDG7XUQRII ,G VD 9GV ,G 7GHOD\RII IDM 9JV 9JV RQ ID 9JV,W VDD VDD 9GV ,G 9GV 7U 7 LVH 7IDOO AM01472v1 7FU RVV RYHU $0Y DocID022522 Rev 5 9/16 Document Outline Figure 1. Internal schematic diagram Table 1. Device summary 1 Electrical ratings Table 2. Absolute maximum ratings Table 3. Thermal data 2 Electrical characteristics Table 4. On /off states Table 5. Dynamic Table 6. Switching times Table 7. Source drain diode 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Gate charge vs gate-source voltage Figure 7. Static drain-source on resistance Figure 8. Capacitance variations Figure 9. Output capacitance stored energy Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on-resistance vs temperature Figure 12. Source-drain diode forward characteristics Figure 13. Normalized V(BR)DSS vs temperature Figure 14. Switching losses vs gate resistance 3 Test circuits Figure 15. Switching times test circuit for resistive load Figure 16. Gate charge test circuit Figure 17. Test circuit for inductive load switching and diode recovery times Figure 18. Unclamped inductive load test circuit Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform 4 Package mechanical data Figure 21. TO-247 drawing Table 8. TO-247 mechanical data Figure 22. TO-247 long leads drawing Table 9. TO-247 long leads mechanical data 5 Revision history Table 10. Document revision history