Datasheet STW88N65M5, STWA88N65M5 (STMicroelectronics) - 6
| Fabricante | STMicroelectronics |
| Descripción | N-channel 650 V, 0.024 Ω typ., 84 A, MDmesh V Power MOSFETs in TO-247 and TO-247 long leads packages |
| Páginas / Página | 16 / 6 — Electrical characteristics. STW88N65M5, STWA88N65M5. 2.1. Electrical … |
| Formato / tamaño de archivo | PDF / 1.3 Mb |
| Idioma del documento | Inglés |
Electrical characteristics. STW88N65M5, STWA88N65M5. 2.1. Electrical characteristics (curves). Figure 2. Safe operating area
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Electrical characteristics STW88N65M5, STWA88N65M5 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance
I AM10392v1 D (A) Tj=150°C Tc=25°C Single pulse 100 DS(on) 10µs ation in this area is y max R 100µs 10 Oper Limited b 1ms 10ms 1 0.1 0.1 1 10 100 VDS(V)
Figure 4. Output characteristics Figure 5. Transfer characteristics
I AM10393v1 AM10394v1 D ID (A) (A) VGS=9, 10V VDS=30V 250 250 225 8V 200 200 175 150 7V 150 125 100 100 75 50 50 6V 25 0 0 0 5 10 15 20 25 VDS(V) 3 4 5 6 7 8 9 VGS(V)
Figure 6. Gate charge vs gate-source voltage Figure 7. Static drain-source on resistance
V AM10395v1 AM10396v1 GS RDS(on) VDS (V) (V) (Ω) V V DD=520V GS=10V 14 ID=42A 500 VDS 12 0.026 400 10 8 300 0.024 6 200 4 0.022 100 2 0 0 0.020 0 50 100 150 200 Qg(nC) 0 10 20 30 40 50 60 70 80 ID(A) 6/16 DocID022522 Rev 5 Document Outline Figure 1. Internal schematic diagram Table 1. Device summary 1 Electrical ratings Table 2. Absolute maximum ratings Table 3. Thermal data 2 Electrical characteristics Table 4. On /off states Table 5. Dynamic Table 6. Switching times Table 7. Source drain diode 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Gate charge vs gate-source voltage Figure 7. Static drain-source on resistance Figure 8. Capacitance variations Figure 9. Output capacitance stored energy Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on-resistance vs temperature Figure 12. Source-drain diode forward characteristics Figure 13. Normalized V(BR)DSS vs temperature Figure 14. Switching losses vs gate resistance 3 Test circuits Figure 15. Switching times test circuit for resistive load Figure 16. Gate charge test circuit Figure 17. Test circuit for inductive load switching and diode recovery times Figure 18. Unclamped inductive load test circuit Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform 4 Package mechanical data Figure 21. TO-247 drawing Table 8. TO-247 mechanical data Figure 22. TO-247 long leads drawing Table 9. TO-247 long leads mechanical data 5 Revision history Table 10. Document revision history
I AM10392v1 D (A) Tj=150°C Tc=25°C Single pulse 100 DS(on) 10µs ation in this area is y max R 100µs 10 Oper Limited b 1ms 10ms 1 0.1 0.1 1 10 100 VDS(V)
Figure 4. Output characteristics Figure 5. Transfer characteristics
I AM10393v1 AM10394v1 D ID (A) (A) VGS=9, 10V VDS=30V 250 250 225 8V 200 200 175 150 7V 150 125 100 100 75 50 50 6V 25 0 0 0 5 10 15 20 25 VDS(V) 3 4 5 6 7 8 9 VGS(V)
Figure 6. Gate charge vs gate-source voltage Figure 7. Static drain-source on resistance
V AM10395v1 AM10396v1 GS RDS(on) VDS (V) (V) (Ω) V V DD=520V GS=10V 14 ID=42A 500 VDS 12 0.026 400 10 8 300 0.024 6 200 4 0.022 100 2 0 0 0.020 0 50 100 150 200 Qg(nC) 0 10 20 30 40 50 60 70 80 ID(A) 6/16 DocID022522 Rev 5 Document Outline Figure 1. Internal schematic diagram Table 1. Device summary 1 Electrical ratings Table 2. Absolute maximum ratings Table 3. Thermal data 2 Electrical characteristics Table 4. On /off states Table 5. Dynamic Table 6. Switching times Table 7. Source drain diode 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Gate charge vs gate-source voltage Figure 7. Static drain-source on resistance Figure 8. Capacitance variations Figure 9. Output capacitance stored energy Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on-resistance vs temperature Figure 12. Source-drain diode forward characteristics Figure 13. Normalized V(BR)DSS vs temperature Figure 14. Switching losses vs gate resistance 3 Test circuits Figure 15. Switching times test circuit for resistive load Figure 16. Gate charge test circuit Figure 17. Test circuit for inductive load switching and diode recovery times Figure 18. Unclamped inductive load test circuit Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform 4 Package mechanical data Figure 21. TO-247 drawing Table 8. TO-247 mechanical data Figure 22. TO-247 long leads drawing Table 9. TO-247 long leads mechanical data 5 Revision history Table 10. Document revision history