Datasheet TCKE805 (Toshiba) - 9
| Fabricante | Toshiba |
| Descripción | CMOS Linear Integrated Circuit Silicon Monolithic. 18 V, 5A eFuse IC with Adjustable Over Current Protection and Reverse Blocking FET Control |
| Páginas / Página | 22 / 9 — TCKE805 Series. 2) Operation of the thermal shutdown function |
| Formato / tamaño de archivo | PDF / 996 Kb |
| Idioma del documento | Inglés |
TCKE805 Series. 2) Operation of the thermal shutdown function
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TCKE805NA
TCKE805NL
Versión de texto del documento
TCKE805 Series
CIN COUT 1 μF 1 μF TVS SBD RILIM CdV/dT 36 kΩ 120 pF (ILIM=3 A) Our eFuse IC recommends DF2S23P2CTC as the TVS diode and CUHS20F30 as the SBD diode.
2) Operation of the thermal shutdown function
The overcurrent protection function prevents damage to the IC and load by suppressing power consumption in the event of an error. If the output current exceeds the limit current (I LIM) due to a load error or short circuit, the output voltage and output current also decrease, thereby limiting the power consumed by the ICs and the load. In addition to the short-circuit protection function, which will be described later, it is double-protected against overcurrent, which greatly contributes to the prevention of ignition and smoke. The timing chart of the auto-retry type overcurrent protection clamp operation is shown below. Over-current Over-current elimination detection during this period VOUT Current clamp Clamped with ILIM Thermal shutdown ON ILIM Thermal s hutdown IOUT OFF
Timing chart of overcurrent protection operation (auto-retry type)
When the output current reaches ILIM and overcurrent is detected, the output current is clamped so that no more current than ILIM flows. At this time, the output voltage drops slightly according to the relationship between the output voltage and the current, which will be described later. If the overcurrent is not resolved at this stage, this condition is maintained and the IC temperature continues to rise. Soon the IC reaches the operating temperature of the thermal shutdown function, the MOSFET is switched off, and the eFuse IC stops operating. 9 2019-11-8 © 2019 Toshiba Electronic Devices & Storage Corporation
CIN COUT 1 μF 1 μF TVS SBD RILIM CdV/dT 36 kΩ 120 pF (ILIM=3 A) Our eFuse IC recommends DF2S23P2CTC as the TVS diode and CUHS20F30 as the SBD diode.
2) Operation of the thermal shutdown function
The overcurrent protection function prevents damage to the IC and load by suppressing power consumption in the event of an error. If the output current exceeds the limit current (I LIM) due to a load error or short circuit, the output voltage and output current also decrease, thereby limiting the power consumed by the ICs and the load. In addition to the short-circuit protection function, which will be described later, it is double-protected against overcurrent, which greatly contributes to the prevention of ignition and smoke. The timing chart of the auto-retry type overcurrent protection clamp operation is shown below. Over-current Over-current elimination detection during this period VOUT Current clamp Clamped with ILIM Thermal shutdown ON ILIM Thermal s hutdown IOUT OFF
Timing chart of overcurrent protection operation (auto-retry type)
When the output current reaches ILIM and overcurrent is detected, the output current is clamped so that no more current than ILIM flows. At this time, the output voltage drops slightly according to the relationship between the output voltage and the current, which will be described later. If the overcurrent is not resolved at this stage, this condition is maintained and the IC temperature continues to rise. Soon the IC reaches the operating temperature of the thermal shutdown function, the MOSFET is switched off, and the eFuse IC stops operating. 9 2019-11-8 © 2019 Toshiba Electronic Devices & Storage Corporation