Datasheet TCKE805 (Toshiba) - 7
| Fabricante | Toshiba |
| Descripción | CMOS Linear Integrated Circuit Silicon Monolithic. 18 V, 5A eFuse IC with Adjustable Over Current Protection and Reverse Blocking FET Control |
| Páginas / Página | 22 / 7 — TCKE805 Series. TCKE805 AC Characteristics (Unless otherwise specified, … |
| Formato / tamaño de archivo | PDF / 996 Kb |
| Idioma del documento | Inglés |
TCKE805 Series. TCKE805 AC Characteristics (Unless otherwise specified, Ta = -40 to 85°C, VIN = 5V, RILIM = 20k. , RLOAD=5
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TCKE805NA
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Versión de texto del documento
TCKE805 Series TCKE805 AC Characteristics (Unless otherwise specified, Ta = -40 to 85°C, VIN = 5V, RILIM = 20k
Ω
, RLOAD=5
Ω
, CIN = COUT = 1μF )
Characteristics Symbol Test Condition Min. Typ. Max. Unit V V EN↑ to IIN = 100 mA, 1 A resistive load at VOUT, OUT on time tON 330 µs CdV/dT = OPEN (Note5) VOUT off time tOFF VEN↓ to VEFET↓, CEFET = OPEN (Note5) 0.96 µs VEN↑ to VOUT become VIN* 90%, CdV/dT = OPEN µs (Note6) 200 400 700 Output ramp time tdV/dT VEN↑ to VOUT become VIN* 90%, CdV/dT = 1 nF 2.3 ms (Note5) Fast trip comparator delay tFastOffDly IOUT > IFASTTRIP to IOUT = 0 (Switch off) (Note5) 150 ns VEN↑ to VEFET = VIN, CEFET = 1 nF(Note5) 2.6 ms EFET on time tEFET-ON VEN↑ to VEFET = VIN, CEFET = 10 nF(Note5) 25 ms VEN↓ to VEFET = 1 V, CEFET = 1 nF(Note5) 1.2 µs EFET off time tEFET-OFF VEN↓ to VEFET = 1 V, CEFET = 10 nF(Note5) 2.9 µs Note5: This parameter is reference only. Note6: This parameter is warranted by design. 7 2019-11-8 © 2019 Toshiba Electronic Devices & Storage Corporation
Ω
, RLOAD=5
Ω
, CIN = COUT = 1μF )
Characteristics Symbol Test Condition Min. Typ. Max. Unit V V EN↑ to IIN = 100 mA, 1 A resistive load at VOUT, OUT on time tON 330 µs CdV/dT = OPEN (Note5) VOUT off time tOFF VEN↓ to VEFET↓, CEFET = OPEN (Note5) 0.96 µs VEN↑ to VOUT become VIN* 90%, CdV/dT = OPEN µs (Note6) 200 400 700 Output ramp time tdV/dT VEN↑ to VOUT become VIN* 90%, CdV/dT = 1 nF 2.3 ms (Note5) Fast trip comparator delay tFastOffDly IOUT > IFASTTRIP to IOUT = 0 (Switch off) (Note5) 150 ns VEN↑ to VEFET = VIN, CEFET = 1 nF(Note5) 2.6 ms EFET on time tEFET-ON VEN↑ to VEFET = VIN, CEFET = 10 nF(Note5) 25 ms VEN↓ to VEFET = 1 V, CEFET = 1 nF(Note5) 1.2 µs EFET off time tEFET-OFF VEN↓ to VEFET = 1 V, CEFET = 10 nF(Note5) 2.9 µs Note5: This parameter is reference only. Note6: This parameter is warranted by design. 7 2019-11-8 © 2019 Toshiba Electronic Devices & Storage Corporation