Datasheet TCKE805 (Toshiba) - 6
| Fabricante | Toshiba |
| Descripción | CMOS Linear Integrated Circuit Silicon Monolithic. 18 V, 5A eFuse IC with Adjustable Over Current Protection and Reverse Blocking FET Control |
| Páginas / Página | 22 / 6 — TCKE805 Series. TCKE805 series DC Characteristics (Unless otherwise … |
| Formato / tamaño de archivo | PDF / 996 Kb |
| Idioma del documento | Inglés |
TCKE805 Series. TCKE805 series DC Characteristics (Unless otherwise specified, Ta = -40 to 85°C, VIN = 5V, RILIM = 20k
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TCKE805NA
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TCKE805 Series TCKE805 series DC Characteristics (Unless otherwise specified, Ta = -40 to 85°C, VIN = 5V, RILIM = 20k
Ω
)
Ta = 25℃ Ta = −40 to 85℃ Characteristics Symbol Test Condition Unit Min. Typ. Max. Min. Max.
Basic operation
VIN under voltage lockout (UVLO) V threshold, rising IN_UVLO 4.15 4.00 4.40 V VIN under voltage lockout (UVLO) V hysteresis IN_UVhyst 5 % EN/UVLO threshold voltage, rising VENR 1.1 1.0 1.2 V EN/UVLO threshold voltage, falling VENF 0.96 0.89 1.01 V On resistance RON IOUT = 1.5 A 28 38 mΩ V Quiescent current (ON state) I EN = 3 V, RILIM = 120 kΩ, Q 0.46 0.61 mA IOUT = 0 A Quiescent current (OFF state) IQ(OFF) EN = 0V 33 48 μA
dV/dT control
Capacitor Voltage VdV/dT 3 V Charging Current IdV/dT VdV/dT =0V 250 nA Discharge resistance RdV/dT VEN = 0 V, IdV/dT =10 mA 5 3 9 Ω dV/dT to OUT gain GAINdV/dT (Note2) VdV/dT = 0.3 V 10.5
External FET Gate driver
Charging Current IEFET VEFET = 5 V (Note2) 2 µA Output voltage VEFET (Note2) VIN+4.9 VIN+4.4 VIN+5.3 V Discharge resistance REFET VEN = 0 V, IEFET = 20 mA 24 12 40 Ω
Over-voltage Protection
Over voltage clamp (OVC) VOVC VIN = 7 V, IOUT = 1 A 6.04 5.62 6.45 V
Over-current Protection
RILIM = 20 kΩ, VIN - VOUT = 1 V 5.15 4.44 5.87 RILIM = 24 kΩ, VIN - VOUT = 1 V 4.38 3.88 4.88 RILIM = 35.1 kΩ, VIN - VOUT = 1 V 3.06 2.70 3.41 ILIM RILIM = 62 kΩ, VIN - VOUT = 1 V 1.78 1.52 2.04 Over current limit (Note3) A (IOUT_CL) RILIM = 120 kΩ, VIN - VOUT = 1 V 0.96 0.76 1.16 RILIM = 250 kΩ, VIN - VOUT = 1 V 0.50 0.35 0.65 RILIM = 0 Ω, VIN - VOUT = 1 V 0.64 RILIM = OPEN, VIN - VOUT = 1 V 0.64 Short-circuit current limit ISCL (Note2),(Note4) 0.15 0.05 0.50 A I I Fast trip comparator level FASTTRIP LIM× A (I SHORT_TRIP) 1.6 ILIM short resistor detect Threshold RSHORTLIM 11 kΩ
Thermal Protection
Thermal shut down Threshold TSD Tj 160 °C Thermal shut down Hysteresis TSDH Tj 20 °C Note2: This parameter is warranted by design. Note3: Pulsed testing techniques used during this test maintain junction temperature approximately equal to ambient temperature. Note4: Hard short less than 10 mΩ. 6 2019-11-8 © 2019 Toshiba Electronic Devices & Storage Corporation
Ω
)
Ta = 25℃ Ta = −40 to 85℃ Characteristics Symbol Test Condition Unit Min. Typ. Max. Min. Max.
Basic operation
VIN under voltage lockout (UVLO) V threshold, rising IN_UVLO 4.15 4.00 4.40 V VIN under voltage lockout (UVLO) V hysteresis IN_UVhyst 5 % EN/UVLO threshold voltage, rising VENR 1.1 1.0 1.2 V EN/UVLO threshold voltage, falling VENF 0.96 0.89 1.01 V On resistance RON IOUT = 1.5 A 28 38 mΩ V Quiescent current (ON state) I EN = 3 V, RILIM = 120 kΩ, Q 0.46 0.61 mA IOUT = 0 A Quiescent current (OFF state) IQ(OFF) EN = 0V 33 48 μA
dV/dT control
Capacitor Voltage VdV/dT 3 V Charging Current IdV/dT VdV/dT =0V 250 nA Discharge resistance RdV/dT VEN = 0 V, IdV/dT =10 mA 5 3 9 Ω dV/dT to OUT gain GAINdV/dT (Note2) VdV/dT = 0.3 V 10.5
External FET Gate driver
Charging Current IEFET VEFET = 5 V (Note2) 2 µA Output voltage VEFET (Note2) VIN+4.9 VIN+4.4 VIN+5.3 V Discharge resistance REFET VEN = 0 V, IEFET = 20 mA 24 12 40 Ω
Over-voltage Protection
Over voltage clamp (OVC) VOVC VIN = 7 V, IOUT = 1 A 6.04 5.62 6.45 V
Over-current Protection
RILIM = 20 kΩ, VIN - VOUT = 1 V 5.15 4.44 5.87 RILIM = 24 kΩ, VIN - VOUT = 1 V 4.38 3.88 4.88 RILIM = 35.1 kΩ, VIN - VOUT = 1 V 3.06 2.70 3.41 ILIM RILIM = 62 kΩ, VIN - VOUT = 1 V 1.78 1.52 2.04 Over current limit (Note3) A (IOUT_CL) RILIM = 120 kΩ, VIN - VOUT = 1 V 0.96 0.76 1.16 RILIM = 250 kΩ, VIN - VOUT = 1 V 0.50 0.35 0.65 RILIM = 0 Ω, VIN - VOUT = 1 V 0.64 RILIM = OPEN, VIN - VOUT = 1 V 0.64 Short-circuit current limit ISCL (Note2),(Note4) 0.15 0.05 0.50 A I I Fast trip comparator level FASTTRIP LIM× A (I SHORT_TRIP) 1.6 ILIM short resistor detect Threshold RSHORTLIM 11 kΩ
Thermal Protection
Thermal shut down Threshold TSD Tj 160 °C Thermal shut down Hysteresis TSDH Tj 20 °C Note2: This parameter is warranted by design. Note3: Pulsed testing techniques used during this test maintain junction temperature approximately equal to ambient temperature. Note4: Hard short less than 10 mΩ. 6 2019-11-8 © 2019 Toshiba Electronic Devices & Storage Corporation