Datasheet TCKE805 (Toshiba) - 2
| Fabricante | Toshiba |
| Descripción | CMOS Linear Integrated Circuit Silicon Monolithic. 18 V, 5A eFuse IC with Adjustable Over Current Protection and Reverse Blocking FET Control |
| Páginas / Página | 22 / 2 — TCKE805 Series. Absolute Maximum Ratings (Ta = 25°C). Operating Ranges |
| Formato / tamaño de archivo | PDF / 996 Kb |
| Idioma del documento | Inglés |
TCKE805 Series. Absolute Maximum Ratings (Ta = 25°C). Operating Ranges
Línea de modelo para esta hoja de datos
TCKE805NA
TCKE805NL
Versión de texto del documento
TCKE805 Series Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit Input voltage VIN -0.3 to 18.0 V ILIM voltage VILIM -0.3 to 6.0 V dV/dT voltage VdV/dT -0.3 to 6.0 V Control voltage VEN/UVLO -0.3 to 18.0 V Output voltage VOUT -0.3 to VIN + 0.3 or 18.0 V which is smaller V External MOSFET voltage VEFET -0.3 to 30.0 V Power dissipation PD 2.4 (Note 1) W Junction temperature Tj 150 °C Storage temperature Tstg − 55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note1: Rating at mounting on a board: FR4 board. (76.2mm * 114.3mm * 1.6mm, 4 layer )
Operating Ranges
Characteristics Symbol Ranges Unit Input voltage VIN 4.4 to 18.0 V Output current IOUT Continuous output current 0 to 5.0 A ILIM External resistance RILIM 20 to 300 kΩ Control voltage VEN/UVLO 0 to 18 V External MOSFET voltage VEFET 0 to VIN + 4.9 V Operating Ambient Ta_ temperature range opr −40 to 85 °C External capacitance CdV/dT 1 (typ), 100 (max) nF 2 2019-11-8 © 2019 Toshiba Electronic Devices & Storage Corporation
Characteristics Symbol Rating Unit Input voltage VIN -0.3 to 18.0 V ILIM voltage VILIM -0.3 to 6.0 V dV/dT voltage VdV/dT -0.3 to 6.0 V Control voltage VEN/UVLO -0.3 to 18.0 V Output voltage VOUT -0.3 to VIN + 0.3 or 18.0 V which is smaller V External MOSFET voltage VEFET -0.3 to 30.0 V Power dissipation PD 2.4 (Note 1) W Junction temperature Tj 150 °C Storage temperature Tstg − 55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note1: Rating at mounting on a board: FR4 board. (76.2mm * 114.3mm * 1.6mm, 4 layer )
Operating Ranges
Characteristics Symbol Ranges Unit Input voltage VIN 4.4 to 18.0 V Output current IOUT Continuous output current 0 to 5.0 A ILIM External resistance RILIM 20 to 300 kΩ Control voltage VEN/UVLO 0 to 18 V External MOSFET voltage VEFET 0 to VIN + 4.9 V Operating Ambient Ta_ temperature range opr −40 to 85 °C External capacitance CdV/dT 1 (typ), 100 (max) nF 2 2019-11-8 © 2019 Toshiba Electronic Devices & Storage Corporation