Datasheet STTS22H (STMicroelectronics) - 7
| Fabricante | STMicroelectronics |
| Descripción | Low-voltage, ultra-low-power, 0.5 °C accuracy I2C/SMBus 3.0 temperature sensor |
| Páginas / Página | 29 / 7 — STTS22H. Absolute maximum ratings. Table 5. Absolute maximum ratings. … |
| Formato / tamaño de archivo | PDF / 1.4 Mb |
| Idioma del documento | Inglés |
STTS22H. Absolute maximum ratings. Table 5. Absolute maximum ratings. Symbol. Ratings. Maximum value. Unit. DS12606. Rev 4. page 7/29
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STTS22H Absolute maximum ratings 4 Absolute maximum ratings
Stresses above those listed as “Absolute maximum ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device under these conditions is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability.
Table 5. Absolute maximum ratings Symbol Ratings Maximum value Unit
VDD Supply voltage -0.3 to 4.8 V Vin Input voltage on any control pin -0.3 to VDD+0.3 V TSTG Storage temperature range -40 to +125 °C ESD Electrostatic discharge protection 2 (HBM) kV Note: Supply voltage on any pin should never exceed 4.8 V. This device is sensitive to mechanical shock, improper handling can cause permanent damage to the part. This device is sensitive to electrostatic discharge (ESD), improper handling can cause permanent damage to the part.
DS12606
-
Rev 4 page 7/29
Document Outline 1 Overview 2 Pin description 3 Sensor parameters and electrical specifications 3.1 Sensor accuracy specifications 4 Absolute maximum ratings 5 Digital interfaces 5.1 SMBus interface 5.1.1 SMBus protocol 5.1.2 WRITE byte 5.1.3 READ byte 5.1.4 SEND byte 5.1.5 RECEIVE byte 5.1.6 SMBus timeout 5.1.7 Alert response address 5.2 I²C interface 5.2.1 I²C protocol 5.2.2 I²C read and write sequences 6 Register description 6.1 WHOAMI (01h) - RO 6.2 TEMP_H_LIMIT (02h) - RW 6.3 TEMP_L_LIMIT (03h) - RW 6.4 CTRL (04h) - RW 6.5 STATUS (05h) - RO 6.6 TEMP_L_OUT (06h) - RO 6.7 TEMP_H_OUT (07h) - RO 6.8 SOFTWARE_RESET (0Ch) - RW 7 Interrupt 8 ALERT / INT output 9 Operating modes 9.1 Enable sequence for one-shot mode 9.2 Enable sequence for freerun mode 9.3 Enable sequence for low-ODR mode 10 Package information 10.1 Soldering information 10.2 UDFN-6L package information 10.3 UDFN-6L packing information Revision history
Stresses above those listed as “Absolute maximum ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device under these conditions is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability.
Table 5. Absolute maximum ratings Symbol Ratings Maximum value Unit
VDD Supply voltage -0.3 to 4.8 V Vin Input voltage on any control pin -0.3 to VDD+0.3 V TSTG Storage temperature range -40 to +125 °C ESD Electrostatic discharge protection 2 (HBM) kV Note: Supply voltage on any pin should never exceed 4.8 V. This device is sensitive to mechanical shock, improper handling can cause permanent damage to the part. This device is sensitive to electrostatic discharge (ESD), improper handling can cause permanent damage to the part.
DS12606
-
Rev 4 page 7/29
Document Outline 1 Overview 2 Pin description 3 Sensor parameters and electrical specifications 3.1 Sensor accuracy specifications 4 Absolute maximum ratings 5 Digital interfaces 5.1 SMBus interface 5.1.1 SMBus protocol 5.1.2 WRITE byte 5.1.3 READ byte 5.1.4 SEND byte 5.1.5 RECEIVE byte 5.1.6 SMBus timeout 5.1.7 Alert response address 5.2 I²C interface 5.2.1 I²C protocol 5.2.2 I²C read and write sequences 6 Register description 6.1 WHOAMI (01h) - RO 6.2 TEMP_H_LIMIT (02h) - RW 6.3 TEMP_L_LIMIT (03h) - RW 6.4 CTRL (04h) - RW 6.5 STATUS (05h) - RO 6.6 TEMP_L_OUT (06h) - RO 6.7 TEMP_H_OUT (07h) - RO 6.8 SOFTWARE_RESET (0Ch) - RW 7 Interrupt 8 ALERT / INT output 9 Operating modes 9.1 Enable sequence for one-shot mode 9.2 Enable sequence for freerun mode 9.3 Enable sequence for low-ODR mode 10 Package information 10.1 Soldering information 10.2 UDFN-6L package information 10.3 UDFN-6L packing information Revision history