Datasheet IGT40R070D1 E8220 (Infineon) - 7
| Fabricante | Infineon |
| Descripción | CoolGaN™ 400V enhancement-mode power transistor |
| Páginas / Página | 16 / 7 — Figure 1. Figure 2. 140. 120. 100. 0.1. (°C. O TP. 0.01. 0.001. 160. … |
| Revisión | 02_00 |
| Formato / tamaño de archivo | PDF / 525 Kb |
| Idioma del documento | Inglés |
Figure 1. Figure 2. 140. 120. 100. 0.1. (°C. O TP. 0.01. 0.001. 160. 1000. Rectangular Pulse Duration (ms). (°C). CASE. Figure 3. Figure 4. tp = 20 ns
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IGT40R070D1 E8220 400V CoolGaN™ enhancement-mode Power Transistor 4 Electrical characteristics diagrams at Tj = 25 °C, unless specified otherwise
Figure 1
Power dissipation
Figure 2
Max. transient thermal impedance
140 1 120 100 0.1 ) 80 /W ) (°C (W C L J A 60 th T Z O TP 0.01
D= 0.5
40
0.2 0.1 0.05 0.02
20
0.01 single pulse
0 0.001 0 20 40 60 80 100 120 140 160 0 0 1 10 100 1000 Rectangular Pulse Duration (ms) T (°C) CASE
Ptot=f(Tc) ZthJC=f(tp, D)
Figure 3
Safe operating area
Figure 4
Safe operating area
100 100 tp = 20 ns tp = 20 ns tp = 10 μs tp = 1 ms tp = 100 μs tp = 10 μs tp = 100 μs 10 10 DC Limited by R (on) DS Limited by R (on) DC tp = 1 ms DS ) ) (A (A 1 1 I D I D 0.1 0.1 0.01 0.01 1 10 100 1000 1 10 100 1000 V (V) V (V) DS DS
ID=f(VDS); TC= 25 °C ID=f(VDS); TC= 125 °C Final Data Sheet 7 Rev. 2.0 2018-04-25
Figure 1
Power dissipation
Figure 2
Max. transient thermal impedance
140 1 120 100 0.1 ) 80 /W ) (°C (W C L J A 60 th T Z O TP 0.01
D= 0.5
40
0.2 0.1 0.05 0.02
20
0.01 single pulse
0 0.001 0 20 40 60 80 100 120 140 160 0 0 1 10 100 1000 Rectangular Pulse Duration (ms) T (°C) CASE
Ptot=f(Tc) ZthJC=f(tp, D)
Figure 3
Safe operating area
Figure 4
Safe operating area
100 100 tp = 20 ns tp = 20 ns tp = 10 μs tp = 1 ms tp = 100 μs tp = 10 μs tp = 100 μs 10 10 DC Limited by R (on) DS Limited by R (on) DC tp = 1 ms DS ) ) (A (A 1 1 I D I D 0.1 0.1 0.01 0.01 1 10 100 1000 1 10 100 1000 V (V) V (V) DS DS
ID=f(VDS); TC= 25 °C ID=f(VDS); TC= 125 °C Final Data Sheet 7 Rev. 2.0 2018-04-25