AOTL66912100V N-Channel AlphaSGT TMGeneral DescriptionProduct Summary VDS • Trench Power MOSFET - AlphaSGTTM 100V technology • Combination of low R I DS(ON) and wide safe operating D (at VGS=10V) 380A area (SOA) RDS(ON) (at VGS=10V) < 1.7mΩ • Higher in-rush current enabled for faster start-up and RDS(ON) (at VGS=6V) < 2.5mΩ shorter down time • RoHS and Halogen-Free Compliant Applications 100% UIS Tested 100% Rg Tested • Telecom hotswap • Load switch • Solar • Battery management TOLLATop ViewBottom View D D PIN1 S G G S PIN1 Orderable Part NumberPackage TypeFormMinimum Order Quantity AOTL66912 TOLLA Tape & Reel 2000 Absolute Maximum Ratings TA=25°C unless otherwise notedParameterSymbolMaximumUnits Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V TC=25°C 380 Continuous Drain ID Current TC=100°C 269 A Pulsed Drain Current C (≤100μS) IDM 1520 TA=25°C Continuous Drain 49 IDSM A Current TA=70°C 39 Avalanche Current C IAS 90 A Avalanche energy L=0.1mH C EAS 405 mJ TC=25°C 500 PD W Power Dissipation B TC=100°C 250 TA=25°C 8.3 PDSM W Power Dissipation A TA=70°C 5.3 Junction and Storage Temperature Range TJ, TSTG -55 to 175 °C Thermal Characteristics ParameterSymbolTypMaxUnits Maximum Junction-to-Ambient A t ≤ 10s 10 15 °C/W RqJA Maximum Junction-to-Ambient A D Steady-State 35 45 °C/W Maximum Junction-to-Case Steady-State RqJC 0.2 0.3 °C/W Rev.1.0: June 2019 www.aosmd.com Page 1 of 6