Datasheet AOTL66610 (Alpha & Omega) - 2

AOTL66610 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 60 V VDS=60V, VGS=0V 1 I Zero Gate Voltage Drain Current μA DSS TJ=55°C 5 I V GSS Gate-Body leakage current DS=0V, VGS=±20V ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 2.4 2.95 3.6 V VGS=10V, ID=20A 1.0 1.2 mΩ RDS(ON) Static Drain-Source On-Resistance TJ=125°C 1.55 1.85 VGS=6V, ID=20A 1.4 1.9 mΩ gFS Forward Transconductance VDS=5V, ID=20A 95 S V I SD Diode Forward Voltage S=1A, VGS=0V 0.68 1 V IS Maximum Body-Diode Continuous Current 300 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 7625 pF C Output Capacitance V oss GS=0V, VDS=30V, f=1MHz 2145 pF Crss Reverse Transfer Capacitance 68 pF Rg Gate resistance f=1MHz 0.8 1.65 2.5 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 103 145 nC Q V gs Gate Source Charge GS=10V, VDS=30V, ID=20A 31 nC Qgd Gate Drain Charge 23 nC Qoss Output Charge VGS=0V, VDS=30V 135 nC tD(on) Turn-On DelayTime 23.5 ns tr Turn-On Rise Time VGS=10V, VDS=30V, RL=1.5W, 14.5 ns t R D(off) Turn-Off DelayTime GEN=3W 64 ns tf Turn-Off Fall Time 26 ns trr Body Diode Reverse Recovery Time IF=20A, di/dt=500A/ms 37 ns Qrr Body Diode Reverse Recovery Charge IF=20A, di/dt=500A/ms 172 nC A. The value of Rq is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with T =25°C. The JA A Power dissipation P is based on R t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application DSM qJA depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation P is based on T =175°C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature T =175°C. J(MAX) D. The Rq is the sum of the thermal impedance from junction to case R and case to ambient. JA qJC E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =175°C. The SOA curve provides a single pulse rating. J(MAX) G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with T =25°C. A APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: February 2019 www.aosmd.com Page 2 of 6