Datasheet TSSP960 (Vishay) - 3
| Fabricante | Vishay |
| Descripción | IR Sensor Module for Reflective Sensor, Light Barrier, and Fast Proximity Applications |
| Páginas / Página | 11 / 3 — TSSP960.. TYPICAL CHARACTERISTICS. Optical Test Signal. Output Signal |
| Formato / tamaño de archivo | PDF / 324 Kb |
| Idioma del documento | Inglés |
TSSP960.. TYPICAL CHARACTERISTICS. Optical Test Signal. Output Signal
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TSSP960..
www.vishay.com Vishay Semiconductors
TYPICAL CHARACTERISTICS
(Tamb = 25 °C, unless otherwise specified) Axis Title E
Optical Test Signal
e 0.8 10000 (IR diode TSAL6200, IF = 0.4 A, 30 pulses, f = f0, t = 10 ms) 0.7 ton s) (m 0.6 t idth 1000 0.5 t e W toff pi * ls ne ne ine u 0.4 T 1st li 2nd li * t 2nd l pi 10/f0 is recommended for optimal function 0.3 utput P 100
Output Signal
O 16110 V - O f 0.2 of 1) , t V 7/f OH 0 < td < 15/f0 t on 0.1 2) λ = 950 nm, tpi - 5/f0 < tpo < tpi + 6/f0 optical test signal, Fig. 3 V 0 10 OL 0.1 1 10 100 1000 10 000 t 1) t 2) t d po E - Irradiance (mW/m2) e Fig. 1 - Output Active Low Fig. 4 - Output Pulse Diagram Axis Title 0.90 10000 1.2 Output pulse width 1.0 0.85 s) (m 0.8 0.80 1000 idth W ne ne 0.6 ine lse 0.75 u Input burst length 1st li 2nd li 2nd l 0.4 - Relative Responsivity e 0.70 100 utput P /E f = f ± 5 % O 0.2 0 - Δf(3 dB) = f /10 e min. 0 t po 0.65 λ = 950 nm, E optical test signal, Fig. 1 0.0 0.7 0.9 1.1 1.3 0.60 10 0.1 10 1000 100 000 16925 f/f0 - Relative Frequency E - Irradiance (mW/m2) e Fig. 2 - Pulse Length and Sensitivity in Dark Ambient Fig. 5 - Frequency Dependence of Responsivity
Optical Test Signal
Axis Title E e 2.0 10000 )2 1.8 /m W 1.6 (m 1.4 t 1000 600 µs 600 µs ance 1.2 ne ne ine t = 60 ms rradi 1.0 d I 1st li 2nd li 2nd l 0.8 94 8134
Output Signal
, (see Fig. 4) 100 V 0.6 O hreshol T - 0.4 VOH in. e m 0.2 E V 0 10 OL t -30 -10 10 30 50 70 90 t on t off T - Ambient Temperature (°C) amb Fig. 3 - Output Function Fig. 6 - Sensitivity vs. Ambient Temperature Rev. 1.1, 17-Apr-2019
3
Document Number: 82868 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Semiconductors
TYPICAL CHARACTERISTICS
(Tamb = 25 °C, unless otherwise specified) Axis Title E
Optical Test Signal
e 0.8 10000 (IR diode TSAL6200, IF = 0.4 A, 30 pulses, f = f0, t = 10 ms) 0.7 ton s) (m 0.6 t idth 1000 0.5 t e W toff pi * ls ne ne ine u 0.4 T 1st li 2nd li * t 2nd l pi 10/f0 is recommended for optimal function 0.3 utput P 100
Output Signal
O 16110 V - O f 0.2 of 1) , t V 7/f OH 0 < td < 15/f0 t on 0.1 2) λ = 950 nm, tpi - 5/f0 < tpo < tpi + 6/f0 optical test signal, Fig. 3 V 0 10 OL 0.1 1 10 100 1000 10 000 t 1) t 2) t d po E - Irradiance (mW/m2) e Fig. 1 - Output Active Low Fig. 4 - Output Pulse Diagram Axis Title 0.90 10000 1.2 Output pulse width 1.0 0.85 s) (m 0.8 0.80 1000 idth W ne ne 0.6 ine lse 0.75 u Input burst length 1st li 2nd li 2nd l 0.4 - Relative Responsivity e 0.70 100 utput P /E f = f ± 5 % O 0.2 0 - Δf(3 dB) = f /10 e min. 0 t po 0.65 λ = 950 nm, E optical test signal, Fig. 1 0.0 0.7 0.9 1.1 1.3 0.60 10 0.1 10 1000 100 000 16925 f/f0 - Relative Frequency E - Irradiance (mW/m2) e Fig. 2 - Pulse Length and Sensitivity in Dark Ambient Fig. 5 - Frequency Dependence of Responsivity
Optical Test Signal
Axis Title E e 2.0 10000 )2 1.8 /m W 1.6 (m 1.4 t 1000 600 µs 600 µs ance 1.2 ne ne ine t = 60 ms rradi 1.0 d I 1st li 2nd li 2nd l 0.8 94 8134
Output Signal
, (see Fig. 4) 100 V 0.6 O hreshol T - 0.4 VOH in. e m 0.2 E V 0 10 OL t -30 -10 10 30 50 70 90 t on t off T - Ambient Temperature (°C) amb Fig. 3 - Output Function Fig. 6 - Sensitivity vs. Ambient Temperature Rev. 1.1, 17-Apr-2019
3
Document Number: 82868 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000