Datasheet TSSP940 (Vishay) - 3
| Fabricante | Vishay |
| Descripción | IR Sensor Module for Reflective Sensor, Light Barrier, and Fast Proximity Applications |
| Páginas / Página | 6 / 3 — TSSP940.. TYPICAL CHARACTERISTICS. Optical Test Signal. Output Signal |
| Formato / tamaño de archivo | PDF / 160 Kb |
| Idioma del documento | Inglés |
TSSP940.. TYPICAL CHARACTERISTICS. Optical Test Signal. Output Signal
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TSSP940..
www.vishay.com Vishay Semiconductors
TYPICAL CHARACTERISTICS
(Tamb = 25 °C, unless otherwise specified) Axis Title 0.8 10000 E
Optical Test Signal
e (IR diode TSAL6200, IF = 0.4 A, 30 pulses, f = f0, T = 10 ms) 0.7 ton s) (m 0.6 idth t 1000 0.5 t t (1) e W off pi ls ne ne ine u 0.4 T 1st li (1) 2nd li t ≥ 10/f is recommended for optimal function 2nd l pi 0 0.3 utput P 100
Output Signal
16110-13 V O O - f 0.2 (2) of V 7/f < t < 15/f OH 0 d 0 , t (3) t - 5/f < t < t + 6/f pi 0 po pi 0 t on 0.1 λ = 950 nm, optical test signal, Fig. 3 VOL 0 10 t (2) t (3) t d po 0.1 1 10 100 1000 10 000 100 000 E - Irradiance (mW/m2) e Fig. 1 - Output Delay and Pulse Width Fig. 4 - Output Pulse Diagram Axis Title 0.90 10000 1.2 Output pulse width 0.85 1.0 s) (m 0.80 1000 0.8 idth W ne ne ine lse 0.75 0.6 u Input burst length 1st li 2nd li 2nd l 0.70 100 0.4 utput P - Relative Responsivity e O - /E f = f ± 5 % 0 t po 0.65 0.2 λ = 950 nm, Δf(3 dB) = f /10 e min. 0 optical test signal, Fig. 1 E 0.60 10 0.0 0.1 10 1000 100 000 0.7 0.9 1.1 1.3 E - Irradiance (mW/m2) 16925 f/f e 0 - Relative Frequency Fig. 2 - Pulse Length and Sensitivity in Dark Ambient Fig. 5 - Frequency Dependence of Responsivity Axis Title
Optical Test Signal
E 0.6 10000 e )2 /m 0.5 W (m t 0.4 1000 600 µs 600 µs ance ne ne ine t = 60 ms rradi 0.3 d I 1st li 2nd li 2nd l 94 8134
Output Signal
, (see Fig. 4) V 0.2 100 O hreshol T V - OH 0.1 in. e m V E OL t 0 10 t on t off -30 -10 10 30 50 70 90 T - Ambient Temperature (°C) amb Fig. 3 - Test Signal Fig. 6 - Sensitivity vs. Ambient Temperature Rev. 1.2, 17-Apr-2019
3
Document Number: 82843 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Semiconductors
TYPICAL CHARACTERISTICS
(Tamb = 25 °C, unless otherwise specified) Axis Title 0.8 10000 E
Optical Test Signal
e (IR diode TSAL6200, IF = 0.4 A, 30 pulses, f = f0, T = 10 ms) 0.7 ton s) (m 0.6 idth t 1000 0.5 t t (1) e W off pi ls ne ne ine u 0.4 T 1st li (1) 2nd li t ≥ 10/f is recommended for optimal function 2nd l pi 0 0.3 utput P 100
Output Signal
16110-13 V O O - f 0.2 (2) of V 7/f < t < 15/f OH 0 d 0 , t (3) t - 5/f < t < t + 6/f pi 0 po pi 0 t on 0.1 λ = 950 nm, optical test signal, Fig. 3 VOL 0 10 t (2) t (3) t d po 0.1 1 10 100 1000 10 000 100 000 E - Irradiance (mW/m2) e Fig. 1 - Output Delay and Pulse Width Fig. 4 - Output Pulse Diagram Axis Title 0.90 10000 1.2 Output pulse width 0.85 1.0 s) (m 0.80 1000 0.8 idth W ne ne ine lse 0.75 0.6 u Input burst length 1st li 2nd li 2nd l 0.70 100 0.4 utput P - Relative Responsivity e O - /E f = f ± 5 % 0 t po 0.65 0.2 λ = 950 nm, Δf(3 dB) = f /10 e min. 0 optical test signal, Fig. 1 E 0.60 10 0.0 0.1 10 1000 100 000 0.7 0.9 1.1 1.3 E - Irradiance (mW/m2) 16925 f/f e 0 - Relative Frequency Fig. 2 - Pulse Length and Sensitivity in Dark Ambient Fig. 5 - Frequency Dependence of Responsivity Axis Title
Optical Test Signal
E 0.6 10000 e )2 /m 0.5 W (m t 0.4 1000 600 µs 600 µs ance ne ne ine t = 60 ms rradi 0.3 d I 1st li 2nd li 2nd l 94 8134
Output Signal
, (see Fig. 4) V 0.2 100 O hreshol T V - OH 0.1 in. e m V E OL t 0 10 t on t off -30 -10 10 30 50 70 90 T - Ambient Temperature (°C) amb Fig. 3 - Test Signal Fig. 6 - Sensitivity vs. Ambient Temperature Rev. 1.2, 17-Apr-2019
3
Document Number: 82843 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000