Datasheet TB67S112PG (Toshiba) - 9

FabricanteToshiba
DescripciónBiCD Process Integrated Circuit Silicon Monolithic
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Electrical Characteristics 2 (Ta =25°C, VM = 24 V, unless otherwise specified)

Electrical Characteristics 2 (Ta =25°C, VM = 24 V, unless otherwise specified)

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TB67S112PG
Electrical Characteristics 2 (Ta =25°C, VM = 24 V, unless otherwise specified)
Characteristics Symbol Test conditions Min Typ. Max Unit Thermal shutdown (TSD) circuit operating temperature (Note 1) TjTSD ― 150 160 175 °C Thermal shutdown (TSD) hysteresis TjTSDhys ― ― 30 ― °C UVLO voltage (Note 2) VUVLO At rising VM 3.8 4.0 4.2 V UVLO hysteresis voltage Vhys_uvlo ― ― 200 ― mV Over current detection (ISD) circuit operating current (Note 3) ISD (Design value) 2.1 3.0 5.0 A Note 1: Thermal shutdown (TSD) When the junction temperature of the IC reaches the TSD threshold, the TSD circuit is triggered; the internal reset circuit then turns off the output transistors. In order to avoid malfunction by switching etc., detection mask time is prepared inside IC. Since the operating temperature of TSD circuit has a hysteresis width, the IC returns automatically when the junction temperature is lowered to the temperature to return. The TSD circuit is a backup function to detect a thermal error, therefore is not recommended to be used aggressively. Note 2: Under voltage lockout (UVLO) When the supply voltage to VM pin is 3.8V or less (typ.), the internal circuit is triggered; the internal reset circuit then turns off the output transistors. Once the UVLO is triggered, it can be cleared by reasserting the VM supply voltage to 4.0V or more (typ.) Note 3: Over current detection (ISD) When the output current reaches the threshold, the ISD circuit operates and turns off the output transistors. Noise rejection blanking time is provided to avoid misdetection by switching. The IC operation recovers automatical y after specified recovery time passes.
Cautions on Over current detection (ISD) and Thermal Shutdown (TSD)
The ISD and TSD circuits are only intended to provide temporary protection against irregular conditions such as an output short-circuit; they do not necessarily guarantee the complete IC safety. If the device is used beyond the specified operating ranges, these circuits may not operate properly: then the device may be damaged due to an output short-circuit. The ISD circuit is only intended to provide a temporary protection against an output short-circuit. If such a condition persists for a long time, the device may be damaged due to overstress. Overcurrent conditions must be removed immediately by external hardware.
Back-EMF
While a motor is rotating, there is a timing at which power is fed back to the power supply. At that timing, the motor current recirculates back to the power supply due to the effect of the motor back-EMF. If the power supply does not have enough sink capability, the power supply and output pins of the device might rise above the rated voltages. The magnitude of the motor back-EMF varies with usage conditions and motor characteristics. It must be fully verified that there is no risk that the device or other components wil be damaged or fail due to the motor back-EMF.
IC Mounting
Do not insert devices incorrectly or in the wrong orientation. Otherwise, it may cause breakdown, damage and/or deterioration of the device. 9 2019-07-08