16 /8 — 100nA. 100. Av = 1. SE (. SE ( –5. Av = 5. –10. ESPON. R –15. R –10. IZED …
Formato / tamaño de archivo
PDF / 2.2 Mb
Idioma del documento
Inglés
100nA. 100. Av = 1. SE (. SE ( –5. Av = 5. –10. ESPON. R –15. R –10. IZED –20. IZED. Av = 2. A –15. M –25. Av = 2.5. N –30. N –20. –35. –40. –25. 10k. 100k. 10M. 100M
ADL5306 1055100nA0)0)BBd100 µ Ad–5Av = 1SE (SE ( –5Av = 5–10ESPONESPONR –15R –1010 µ AIZED –20IZEDLLAv = 2AA –15M –25MOR1 µ AORAv = 2.5N –30N –20–35–40–251001k10k100k1M10M100M10k100k1M10M100MFREQUENCY (Hz)03727-0-015FREQUENCY (Hz)03727-0-018 Figure 15. Small-Signal AC Response (5% Sine Modulation), from IPD to VOUT Figure 18. Small-Signal AC Response of the Buffer for Various (G = 1) for IPD in Decade Steps from 10 nA to 1 mA Closed-Loop Gains (RL = 1 kΩ, CL < 2 pF) 102.05100nA1.5)0B d100 µ A1.0–5MEAN + 3 σ SE () 0.5–10ESPON R –15010 µ ADRIFT (mVIZED –20LOS–0.5AVMEAN – 3 σ M –25 OR1 µ A–1.0N –30–1.5–35–40–2.01001k10k100k1M10M100M–40 –30 –20 –1001020 304050607080 90FREQUENCY (Hz)03727-0-016TEMPERATURE (°C)03727-0-019 Figure 16. Small-Signal AC Response (5% Sine Modulation), from IREF to VOUT Figure 19. Buffer Input Offset Drift vs. Temperature (G = 1) for IREF in Decade Steps from 10 nA to 1 mA (3σ to Either Side of Mean) 1006510100nA411 µ A3mVrms µ Vrms/ Hz10 µ A20.1100 µ A10.0101001k10k100k1M10M10n100n1 µ 10 µ 100 µ 1mFREQUENCY (Hz)03727-0-017IPD (A)03727-0-020 Figure 17. Spot Noise Spectral Density at VOUT (G = 1) vs. Frequency Figure 20. Total Wideband Noise Voltage at VOUT vs. IPD (G = 1) for IPD in Decade Steps from 10 nA to 1 mA Rev. 0 | Page 8 of 16 Document Outline FEATURES APPLICATIONS GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM TABLE OF CONTENTS SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS PIN CONFIGURATION AND PIN FUNCTION DESCRIPTIONS TYPICAL PERFORMANCE CHARACTERISTICS GENERAL STRUCTURE THEORY MANAGING INTERCEPT AND SLOPE RESPONSE TIME AND NOISE CONSIDERATIONS APPLICATIONS USING A NEGATIVE SUPPLY CHARACTERIZATION METHODS EVALUATION BOARD OUTLINE DIMENSIONS ORDERING GUIDE