Datasheet Si2312CDS (Vishay) - 6

Si2312CDS
www.vishay.com Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) 1 Duty Cycle = 0.5 ient s ran 0.2 T 0.1 Notes: fective Impedance Ef 0.1 PDM 0.05 Thermal t1 0.02 t2 Normalized t1 1. Duty Cycle, D = t2 2. Per Unit Base = RthJA = 125 °C/W 3. T (t) JM - TA = PDMZthJA Single Pulse 4. Surface Mounted 0.01 10-3 10-2 10-1 10-4 1 10 100 1000 10 000 Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1 ient Duty Cycle = 0.5 s ran T fective Impedance Ef 0.2 Thermal Normalized 0.1 0.02 0.05 Single Pulse 0.1 10-3 10-2 10-1 10-4 1 0 1 Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
                    Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for silicon technology and package reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65900. S10-0641-Rev. A, 22-Mar-10
6
Document Number: 65900 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000