Datasheet SDP8406 (Honeywell) - 2
| Fabricante | Honeywell |
| Descripción | Silicon Phototransistor, Side-looking Clear Plastic Package |
| Páginas / Página | 4 / 2 — SDP8406 Silicon Phototransistor. ELECTRICAL CHARACTERISTICS. PARAMETER. … |
| Formato / tamaño de archivo | PDF / 469 Kb |
| Idioma del documento | Inglés |
SDP8406 Silicon Phototransistor. ELECTRICAL CHARACTERISTICS. PARAMETER. SYMBOL. MIN. TYP. MAX. UNITS. TEST CONDITIONS
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SDP8406 Silicon Phototransistor ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS ABSOLUTE MAXIMUM RATINGS SCHEMATIC
(25¡C Free-Air Temperature unless otherwise noted) Collector-Emitter Voltage 30 V Emitter-Collector Voltage 5 V Power Dissipation 100 mW [À] Operating Temperature Range -40¡C to 85¡C Storage Temperature Range -40¡C to 85¡C Soldering Temperature (5 sec) 240¡C Notes 1. Derate linearly from 25¡C free-air temperature at the rate of 0.78 mW/¡C. Honeywell reserves the right to make changes in order to improve design and h 121 supply the best products possible.
(25¡C Free-Air Temperature unless otherwise noted) Collector-Emitter Voltage 30 V Emitter-Collector Voltage 5 V Power Dissipation 100 mW [À] Operating Temperature Range -40¡C to 85¡C Storage Temperature Range -40¡C to 85¡C Soldering Temperature (5 sec) 240¡C Notes 1. Derate linearly from 25¡C free-air temperature at the rate of 0.78 mW/¡C. Honeywell reserves the right to make changes in order to improve design and h 121 supply the best products possible.