Datasheet 2N3019, 2N3019S, 2N3700 (ON Semiconductor) - 2

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2N3019, 2N3019S, 2N3700 ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage V(BR)CEO Vdc (IC = 30 mAdc) 80 − Emitter−Base Cutoff Current IEBO (VEB = 5.0 Vdc) − 10 nAdc (VEB = 7.0 Vdc) − 10 mAdc Collector−Emitter Cutoff Current ICEO (VCE = 90 Vdc) − 10 nAdc Collector−Base Cutoff Current ICBO (VCB = 140 Vdc) − 10 mAdc
ON CHARACTERISTICS
(Note 1) DC Current Gain hFE − (IC = 0.1 mAdc, VCE = 10 Vdc) 50 300 (IC = 10 mAdc, VCE = 10 Vdc) 90 − (IC = 150 mAdc, VCE = 10 Vdc) 100 300 (IC = 500 mAdc, VCE = 10 Vdc) 50 300 (IC = 1.0 Adc, VCE = 10 Vdc) 15 − Collector−Emitter Saturation Voltage VCE(sat) Vdc (IC = 150 mAdc, IB = 15 mAdc) − 0.2 (IC = 500 mAdc, IB = 50 mAdc) − 0.5 Base −Emitter Saturation Voltage VBE(sat) Vdc (IC = 150 mAdc, IB = 15 mAdc) − 1.1
SMALL−SIGNAL CHARACTERISTICS
Magnitude of Small−Signal Current Gain |hfe| − (IC = 50 mAdc, VCE = 10 Vdc, f = 20 MHz) 5.0 20 Small−Signal Current Gain hfe − (IC = 1.0 mAdc, VCE = 5 Vdc, f = 1 kHz) 80 400 Output Capacitance Cobo pF (VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz) − 12 Input Capacitance Cibo pF (VEB = 0.5 Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz) − 60 Noise Figure NF dB (VCE = 10 Vdc, IC = 100 mAdc, Rg = 1 kW, PBW = 200 Hz) − 4.0 Collector−Base Time Constant r’b,CC ps (VCB = 10 Vdc, IC = 10 mAdc, f = 79.8 MHz) − 400
SWITCHING CHARACTERISTICS
Pulse Response ton + toff ns (Reference Figure in MIL−PRF−19500/391) − 30 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
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