Datasheet NTE128, NTE129 (NTE Electronics) - 2
| Fabricante | NTE Electronics |
| Descripción | Silicon Complementary Small Signal Bipolar Transistors. Audio Output, Video, Driver |
| Páginas / Página | 3 / 2 — Electrical Characteristics:. Parameter. Symbol. Test Conditions. Min. … |
| Formato / tamaño de archivo | PDF / 28 Kb |
| Idioma del documento | Inglés |
Electrical Characteristics:. Parameter. Symbol. Test Conditions. Min. Typ. Max. Unit. OFF Characteristics. ON Characteristics
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Electrical Characteristics:
(TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics
Collector–Emitter Breakdown Voltage V(BR)CEO NTE128 IC = 30mA, IB = 0 80 – – V NTE129 IC = 10mA 80 – – V Collector–Base Breakdown Voltage V(BR)CBO NTE128 IC = 100µA, IE = 0 140 – – V NTE129 IC = 10µA 80 – – V Emitter–Base Breakdown Voltage V(BR)EBO NTE128 IE = 100µA, IC = 0 7 – – V NTE129 IE = 10µA 5 – – V Collector Cutoff Current ICBO NTE128 VCB = 90V, IE = 0 – – 0.01 µA VCB = 90V, IE = 0, TA = +150°C – – 10 µA NTE129 VCB = 60V – – 50 nA VCB = 60V, TA = +150°C – – 50 µA Emitter Cutoff Current IEBO NTE128 VBE = 5V, IC = 0 – – 0.010 µA NTE129 VBE = 5V – – 10 µA
ON Characteristics
(Note 2) DC Current Gain hFE NTE128 IC = 0.1mA, VCE = 10V 50 – – IC = 10mA, VCE = 10V 90 – – IC = 150mA, VCE = 10V 100 – 300 IC = 150mA, VCE = 10V, TC = –55°C 40 – – IC = 500mA, VCE = 10V 50 – – IC = 1.0A, VCE = 10V 15 – – NTE129 IC = 100µA, VCE = 5V 75 – – IC = 100mA, VCE = 5V 100 – 300 IC = 100mA, VCE = 5V, TC = –55°C 40 – – IC = 500mA, VCE = 5V 70 – – IC = 1.0A, VCE = 5V 25 – – Collector–Emitter Saturation Voltage VCE(sat) NTE128 IC = 150mA, IB = 15mA – – 0.2 V IC = 500mA, IB = 50mA – – 0.5 V NTE129 IC = 150mA, IB = 15mA – – 0.15 V IC = 500mA, IB = 50mA – – 0.5 V Base–Emitter Saturation Voltage VBE(sat) NTE128 IC = 150mA, IB = 15mA – – 1.1 V NTE129 – – 0.9 V Base–Emitter ON Voltage (NTE129 Only) VBE(on) IC = 500mA, VCE = 500mV – – 1.1 V Note 2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 1%.
(TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics
Collector–Emitter Breakdown Voltage V(BR)CEO NTE128 IC = 30mA, IB = 0 80 – – V NTE129 IC = 10mA 80 – – V Collector–Base Breakdown Voltage V(BR)CBO NTE128 IC = 100µA, IE = 0 140 – – V NTE129 IC = 10µA 80 – – V Emitter–Base Breakdown Voltage V(BR)EBO NTE128 IE = 100µA, IC = 0 7 – – V NTE129 IE = 10µA 5 – – V Collector Cutoff Current ICBO NTE128 VCB = 90V, IE = 0 – – 0.01 µA VCB = 90V, IE = 0, TA = +150°C – – 10 µA NTE129 VCB = 60V – – 50 nA VCB = 60V, TA = +150°C – – 50 µA Emitter Cutoff Current IEBO NTE128 VBE = 5V, IC = 0 – – 0.010 µA NTE129 VBE = 5V – – 10 µA
ON Characteristics
(Note 2) DC Current Gain hFE NTE128 IC = 0.1mA, VCE = 10V 50 – – IC = 10mA, VCE = 10V 90 – – IC = 150mA, VCE = 10V 100 – 300 IC = 150mA, VCE = 10V, TC = –55°C 40 – – IC = 500mA, VCE = 10V 50 – – IC = 1.0A, VCE = 10V 15 – – NTE129 IC = 100µA, VCE = 5V 75 – – IC = 100mA, VCE = 5V 100 – 300 IC = 100mA, VCE = 5V, TC = –55°C 40 – – IC = 500mA, VCE = 5V 70 – – IC = 1.0A, VCE = 5V 25 – – Collector–Emitter Saturation Voltage VCE(sat) NTE128 IC = 150mA, IB = 15mA – – 0.2 V IC = 500mA, IB = 50mA – – 0.5 V NTE129 IC = 150mA, IB = 15mA – – 0.15 V IC = 500mA, IB = 50mA – – 0.5 V Base–Emitter Saturation Voltage VBE(sat) NTE128 IC = 150mA, IB = 15mA – – 1.1 V NTE129 – – 0.9 V Base–Emitter ON Voltage (NTE129 Only) VBE(on) IC = 500mA, VCE = 500mV – – 1.1 V Note 2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 1%.