Datasheet MMBTA56, PZTA56 (ON Semiconductor) - 3

Values are at TA = 25°C unless otherwise noted. Symbol
PD
RθJA Max. Parameter (3) Unit PZTA56(4) MMBTA56 Total Device Dissipation 350 1000 mW Derate Above 25°C 2.8 8.0 mW/°C Thermal Resistance, Junction-to-Ambient 357 125 °C/W Notes:
3. Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead minimum 6cm2.
4. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. Electrical Characteristics
Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions Min. Max. Unit V(BR)CEO Collector-Emitter Breakdown
Voltage(5) IC = -1.0 mA, IB = 0 -80 V V(BR)CBO Collector-Base Breakdown Voltage IC = -100 μA, IE = 0 -60 V V(BR)EBO Emitter-Base Breakdown Voltage IE = -100 μA, IC = 0 -4.0 V ICEO Collector Cut-Off Current VCE = -60 V, IB = 0 -0.1 μA ICBO Collector Cut-Off Current VCB = -80 V, IE = 0 -0.1 μA hFE DC Current Gain IC = -100 mA, IB = -10 mA -0.25 V -1.2 V IC = -10 mA, VCE = -1.0 V 100 IC = -100 mA, VCE = -1.0 V 100 VCE(sat) Collector-Emitter Saturation
Voltage VBE(on) Base-Emitter On Voltage IC = -100 mA, VCE = -1.0 V Current Gain -Bandwidth Product IC = -100 mA, VCE = -1.0 V,
f = 100 MHz fT 50 MHz Note:
5. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%. © 1997 Fairchild Semiconductor Corporation
MMBTA56 / PZTA56 Rev. 1.4 www.fairchildsemi.com
2 MMBTA56 / PZTA56 — PNP General-Purpose Amplifier Thermal Characteristics