Datasheet MPSA06, MMBTA06, PZTA06 (ON Semiconductor) - 3

Values are at TA = 25°C unless otherwise noted. Symbol Max. Parameter Unit MPSA06 MMBTA06(3) PZTA06(4) Total Device Dissipation 625 350 1000 mW Derate Above 25°C 5.0 2.8 8.0 mW/°C RθJC Thermal Resistance, Junction-to-Case 83.3 RθJA Thermal Resistance, Junction-to-Ambient 200 357 125 PD °C/W
°C/W Notes:
3. Device is mounted on FR-4 PCB 1.6 inch x 1.6 inch x 0.06 inch.
4. Device is mounted on FR-4 PCB 36 mm x 18 mm x 1.5 mm, mounting pad for the collector lead minimum 6 cm2. Electrical Characteristics
Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions Min. Max. Unit Off Characteristics
V(BR)CEO Collector-Emitter Breakdown Voltage(5) IC = 1.0 mA, IB = 0 80 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 100 μA, IC = 0 4.0 V ICEO Collector Cut-Off Current VCE = 60 V, IB = 0 0.1 μA ICBO Collector Cut-Off Current VCB = 80 V, IE = 0 0.1 μA On Characteristics
hFE DC Current Gain IC = 10 mA, VCE = 1.0 V 100 IC = 100 mA, VCE = 1.0 V 100 VCE(sat) Collector-Emitter Saturation Voltage IC = 100 mA, IB = 10 mA 0.25 V VBE(on) Base-Emitter On Voltage IC = 100 mA, VCE = 1.0 V 1.2 V Small Signal Characteristics
fT Current Gain -Bandwidth Product IC = 10 mA, VCE = 2.0 V,
f = 100 MHz 100 MHz Notes:
5. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2%. © 1997 Fairchild Semiconductor Corporation
MPSA06 / MMBTA06 / PZTA06 Rev. 1.1.0 www.fairchildsemi.com
2 MPSA06 / MMBTA06 / PZTA06 — NPN General-Purpose Amplifier Thermal Characteristics