Datasheet RClamp3324P (Semtech) - 2
| Fabricante | Semtech |
| Descripción | Low Capacitance RClamp 4-Line ESD protection |
| Páginas / Página | 8 / 2 — Absolute Maximum Rating. Rating. Symbol. Value. Units. Electrical … |
| Formato / tamaño de archivo | PDF / 776 Kb |
| Idioma del documento | Inglés |
Absolute Maximum Rating. Rating. Symbol. Value. Units. Electrical Characteristics (T=25OC unless otherwise specified). Parameter
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Absolute Maximum Rating Rating Symbol Value Units
Peak Pulse Current (tp = 8/20µs) I 4.5 A PP ESD per IEC 61000-4-2 (Contact)(1) ±17 V kV ESD per IEC 61000-4-2 (Air)(1) ESD ±20 Operating Temperature T -40 to +125 OC J Storage Temperature T -55 to +150 OC STG
Electrical Characteristics (T=25OC unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Units
-40OC to 125OC Reverse Stand-Off Voltage V 3.3 V RWM Any I/O pin to GND tp = 0.2/100ns (TLP) Trigger Voltage V 8 V TRIG Any I/O pin to GND T = 25OC 0.01 0.05 μA Reverse Leakage Current I V = 3.3V R RWM T = 125OC 0.150 μA I = 1A, tp = 8/20µs, Clamping Voltage(2) V PP 2.5 3.5 V C Any I/O pin to GND I = 4.5A, tp = 8/20µs, Clamping Voltage(2) V PP 3.5 4.5 V C Any I/O pin to GND I = 4A, tp = 0.2/100ns (TLP) ESD Clamping Voltage(3) V PP 3.5 V C Any I/O pin to GND I = 16A, tp = 0.2/100ns (TLP) ESD Clamping Voltage(3) V PP 5.3 V C Any I/O pin to GND tp = 0.2/100ns (TLP) Dynamic Resistance(3), (4) R 0.15 Ohms DYN Any I/O pin to GND V = 0V, f = 1MHz R 0.60 0.65 pF Any I/O pin to GND Junction Capacitance CJ V = 0V, f = 1MHz R 0.30 0.40 pF Between I/O Pins Notes: (1): ESD Gun return path to Ground Reference Plane (GRP) (2): Measured using an 8/20us constant current source. (3): Transmission Line Pulse Test (TLP) Settings: tp = 100ns, tr = 0.2ns, I and V averaging window: t = 70ns to t = 90ns. TLP TLP 1 2 (4): Dynamic resistance calculated from I = 4A to I = 16A TLP TLP
RClamp3324P
www.semtech.com
2 of 8 Final Datasheet Rev 6.1 Semtech Revision Date October 4, 2016
Peak Pulse Current (tp = 8/20µs) I 4.5 A PP ESD per IEC 61000-4-2 (Contact)(1) ±17 V kV ESD per IEC 61000-4-2 (Air)(1) ESD ±20 Operating Temperature T -40 to +125 OC J Storage Temperature T -55 to +150 OC STG
Electrical Characteristics (T=25OC unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Units
-40OC to 125OC Reverse Stand-Off Voltage V 3.3 V RWM Any I/O pin to GND tp = 0.2/100ns (TLP) Trigger Voltage V 8 V TRIG Any I/O pin to GND T = 25OC 0.01 0.05 μA Reverse Leakage Current I V = 3.3V R RWM T = 125OC 0.150 μA I = 1A, tp = 8/20µs, Clamping Voltage(2) V PP 2.5 3.5 V C Any I/O pin to GND I = 4.5A, tp = 8/20µs, Clamping Voltage(2) V PP 3.5 4.5 V C Any I/O pin to GND I = 4A, tp = 0.2/100ns (TLP) ESD Clamping Voltage(3) V PP 3.5 V C Any I/O pin to GND I = 16A, tp = 0.2/100ns (TLP) ESD Clamping Voltage(3) V PP 5.3 V C Any I/O pin to GND tp = 0.2/100ns (TLP) Dynamic Resistance(3), (4) R 0.15 Ohms DYN Any I/O pin to GND V = 0V, f = 1MHz R 0.60 0.65 pF Any I/O pin to GND Junction Capacitance CJ V = 0V, f = 1MHz R 0.30 0.40 pF Between I/O Pins Notes: (1): ESD Gun return path to Ground Reference Plane (GRP) (2): Measured using an 8/20us constant current source. (3): Transmission Line Pulse Test (TLP) Settings: tp = 100ns, tr = 0.2ns, I and V averaging window: t = 70ns to t = 90ns. TLP TLP 1 2 (4): Dynamic resistance calculated from I = 4A to I = 16A TLP TLP
RClamp3324P
www.semtech.com
2 of 8 Final Datasheet Rev 6.1 Semtech Revision Date October 4, 2016