Datasheet RV1S9160A (Renesas) - 4

RV1S9160A 章題 RECOMMENDED OPERATING CONDITIONS Parameter Symbol MIN. TYP. MAX. Unit Low Level forward voltage VFL 0 0.8 V High Level Forward Current IFH 3 6 mA Supply Voltage VDD 2.7 5.5 V ELECTRICAL CHARACTERISTICS (TA= -40 to +125°C, VDD = 2.7 to 5.5 V, unless otherwise specified) Parameter Symbol Conditions MIN. TYP.*1 MAX. Unit Diode Forward Voltage VF IF = 6 mA, TA = 25C 1.4 1.55 1.7 V Reverse Current IR VR = 3 V, TA = 25C 10 A Terminal Capacitance Ct VF = 0 V, f = 1 MHz, TA = 25C 30 pF Detector High Level Output Current IDDH IF = 0 mA 1.1 2 mA Low Level Output Current IDDL IF = 3mA 1.0 2 High Level Output Voltage VOH IO = 3.2mA, IF = 0 mA Vdd-1.0 Vdd V IO = 20 A, IF = 0 mA Vdd-0.1 Vdd Low Level Output Voltage VOL IO = 3.2mA, IF = 3 mA 0.13 0.4 IO = 20 A, IF = 3 mA 0.001 0.1 Coupled Threshold Input Voltage IFHL VO  0.4 V 1.0 2.0 mA (H to L) Propagation Delay Time tPHL IF = 3 mA ⇔ 0mA 40 60 ns (H to L)*2 VDD = 3.3V,5 V Propagation Delay Time tPLH CL = 15 pF 38 60 (L to H)*2 Pulse Width Distortion*2 PWD 2 20 Propagation Delay Skew tPSK 25 Rise Time tr 5 Fall Time tf 5 Common Mode |CMH| IF = 0 mA, VO  4 V(VDD = 5V), 50 60 kV/s Transient Immunity at VO  2.3 V(VDD = 3.3V), High Level Output*3 VCM=1.5kV, TA = 25C Common Mode |CML| IF = 3 mA, 50 60 Transient Immunity at VO  0.4 V(VDD = 3.3V, 5V), Low Level Output*3 VCM=1.5kV, TA = 25C R08DS0167EJ0100 Rev.1.00 Page 4 of 13 Jun 4, 2019