Datasheet BC856BDW1T1G, SBC856BDW1T1G, BC857BDW1T1G, SBC857BDW1T1G, BC858CDW1T1G (ON Semiconductor) - 3
| Fabricante | ON Semiconductor |
| Descripción | Dual PNP Bipolar Transistor |
| Páginas / Página | 7 / 3 — BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G,. SBC857BDW1T1G Series, … |
| Revisión | 10 |
| Formato / tamaño de archivo | PDF / 85 Kb |
| Idioma del documento | Inglés |
BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G,. SBC857BDW1T1G Series, BC858CDW1T1G Series
Línea de modelo para esta hoja de datos
Versión de texto del documento
BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G, SBC857BDW1T1G Series, BC858CDW1T1G Series TYPICAL CHARACTERISTICS − BC856/SBC856
-1.0 TJ = 25°C VCE = -5.0 V -0.8 TA = 25°C VBE(sat) @ IC/IB = 10 2.0 TS) -0.6 VBE @ VCE = -5.0 V GAIN (NORMALIZED) 1.0 TAGE (VOL -0.4 0.5 , VOL V -0.2 , DC CURRENT 0.2 V FE CE(sat) @ IC/IB = 10 h 0 -0.1 -0.2 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain Figure 2. “On” Voltage
-2.0 -1.0 TS) C) ° -1.6 (mV/ -1.4 TAGE (VOL IC = -20 mA -50 mA -100 mA -200 mA -1.2 -10 mA -1.8 qVB for VBE COEFFICIENT -55°C to 125°C -0.8 -2.2 OR-EMITTER VOL TURE -0.4 -2.6 , COLLECT , TEMPERA TJ = 25°C CE VB V θ 0 -3.0 -0.02 -0.05 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 3. Collector Saturation Region Figure 4. Base−Emitter Temperature Coefficient
40 VCE = -5.0 V 500 TJ = 25°C 20 Cib 200 ANCE (pF) 10 100 ACIT 8.0 50 6.0 C, CAP Cob 4.0 20 f, CURRENT-GAIN - BANDWIDTH PRODUCT T 2.0-0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -1.0 -10 -100 VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)
Figure 5. Capacitance Figure 6. Current−Gain − Bandwidth Product www.onsemi.com 3
-1.0 TJ = 25°C VCE = -5.0 V -0.8 TA = 25°C VBE(sat) @ IC/IB = 10 2.0 TS) -0.6 VBE @ VCE = -5.0 V GAIN (NORMALIZED) 1.0 TAGE (VOL -0.4 0.5 , VOL V -0.2 , DC CURRENT 0.2 V FE CE(sat) @ IC/IB = 10 h 0 -0.1 -0.2 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain Figure 2. “On” Voltage
-2.0 -1.0 TS) C) ° -1.6 (mV/ -1.4 TAGE (VOL IC = -20 mA -50 mA -100 mA -200 mA -1.2 -10 mA -1.8 qVB for VBE COEFFICIENT -55°C to 125°C -0.8 -2.2 OR-EMITTER VOL TURE -0.4 -2.6 , COLLECT , TEMPERA TJ = 25°C CE VB V θ 0 -3.0 -0.02 -0.05 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 3. Collector Saturation Region Figure 4. Base−Emitter Temperature Coefficient
40 VCE = -5.0 V 500 TJ = 25°C 20 Cib 200 ANCE (pF) 10 100 ACIT 8.0 50 6.0 C, CAP Cob 4.0 20 f, CURRENT-GAIN - BANDWIDTH PRODUCT T 2.0-0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -1.0 -10 -100 VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)
Figure 5. Capacitance Figure 6. Current−Gain − Bandwidth Product www.onsemi.com 3