Datasheet BC856ALT1G (ON Semiconductor) - 5

BC856ALT1G Series
1.0 0.7 D = 0.5 0.5 0.2 0.3 0.2 THERMAL 0.05 SINGLE PULSE 0.1 ZqJC(t) = r(t) RqJC 0.1 R P qJC = 83.3°C/W MAX (pk) 0.07 SINGLE PULSE ZqJA(t) = r(t) RqJA ANCE (NORMALIZED) 0.05 t R 1 qJA = 200°C/W MAX D CURVES APPLY FOR POWER r(t), TRANSIENT t RESIST 0.03 2 PULSE TRAIN SHOWN 0.02 DUTY CYCLE, D = t1/t2 READ TIME AT t1 TJ(pk) - TC = P(pk) RqJC(t) 0.01 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k t, TIME (ms)
Figure 13. Thermal Response
-200 The safe operating area curves indicate IC−VCE limits of 1 s 3 ms the transistor that must be observed for reliable operation. -100 Collector load lines for specific circuits must fall below the (mA) T T limits indicated by the applicable curve. A = 25°C J = 25°C -50 The data of Figure 14 is based upon TJ(pk) = 150°C; TC or TA is variable depending upon conditions. Pulse curves are OR CURRENT BC558, BC559 valid for duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) BC557 may be calculated from the data in Figure 13. At high case or -10 BC556 ambient temperatures, thermal limitations will reduce the , COLLECT -5.0 power that can be handled to values less than the limitations I C BONDING WIRE LIMIT THERMAL LIMIT imposed by the secondary breakdown. SECOND BREAKDOWN LIMIT -2.0 -1.0 -5.0 -10 -30 -45 -65 -100 VCE, COLLECTOR-EMITTER VOLTAGE (V)
Figure 14. Active Region Safe Operating Area www.onsemi.com 5