Datasheet BC856, BC857, BC858 (Multicomp) - 2

FabricanteMulticomp
DescripciónPNP General Purpose Transistor 0.1 A, 45 V, SOT23
Páginas / Página6 / 2 — Parameter:. Symbol:. Test Conditions:. Min:. Typ:. Max:. Unit:
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Parameter:. Symbol:. Test Conditions:. Min:. Typ:. Max:. Unit:

Parameter: Symbol: Test Conditions: Min: Typ: Max: Unit:

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Maximum Ratings & Characteristics: Tamb=25o
Parameter: Symbol: Test Conditions: Min: Typ: Max: Unit:
Collector - Base Breakdown Voltage V I =-10μA I =0 BC856 -80 V (BR)CBO C E BC857 -50 BC858 -30 Collector - Emitter Breakdown Voltage V I =-10mA I =0 BC856 -65 V (BR)CEO C B BC857 -45 BC858 -30 Emmiter - Base Breakdown Voltage V I =-1μA I =0 -5 V (BR)EBO E C I V =-30V I =0 -1 -15 nA CBO CB E I V =-5V,I =0 -0.1 μA EBO EB C DC Current Gain BC856,857 h V =-5V,I =-2mA 125 475 FE CE C BC856A,857A,858A 125 250 BC856B,857B,858B 220 475 BC857C,858C 420 800 Collector - Emitter Saturation Voltage V I =-100mA, I =-5mA -0.65 V CE(sat) C B I =-10mA, I =-0.5mA -0.3 C B Base - Emitter Saturation Voltage V I =-10mA, I =-0.5mA -0.7 V BE(sat) C B I =-100mA, I =-5mA -0.85 C B Base Emitter Voltage V I =-2mA,V =-5V -0.6 -0.65 -0.75 V BE C CE I =-10mA,V =-5V -0.82 C CE Collector Capacitance C V =-10V,I =I =0 4.5 pF C CB E e f=1MHz Transition Frequency F I =-200uA,V =-5V, 2 10 dB C CE R =2kΩ,f=1kHz, S B=200Hz Transition Frequency f V =-10 I =-50, 100 MHz T CE C f=20MH O[[W!^^^MHYULSSJVT O[[W!^^^UL^HYRJVT O[[W!^^^JWJJV\R