Datasheet BC847AT, BC847BT, BC847CT (MCC) - 2

BC847AT/BC847BT/BC847CT Electrical Characteristics @ 25°C Unless Otherwise Specified Parameter Symbol Min Typ Max Units Conditions
Collector-Base Breakdown Voltage V(BR)CBO 50 V IC=10µA, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO 45 V IC=10mA, IB=0 Emitter-Base Breakdown Voltage V(BR)EBO 6 V IE=1µA, IC=0 15 nA V Collector-Base Cutoff Current I CB=30V, IE=0 CBO 5 µA VCB=30V, IE=0, TJ=125℃ BC847AT 110 222 DC Current Gain(Note2) BC847BT hFE 200 290 450 VCE=5V, IC=2mA BC847CT 420 520 800 0.25 V IC=10mA, IB=0.5mA Collector-Emitter Saturation Voltage VCE(sat) 0.6 V IC=100mA, IB=5mA 0.70 V IC=10mA, IB=0.5mA Base-Emitter Saturation Voltage VBE(sat) 0.90 V IC=100mA, IB=5mA 0.58 0.66 0.70 V VCE=5V, IC=2mA Base-Emitter Voltage VBE 0.77 V VCE=5V, IC=10mA Transition Frequency fT 100 MHz VCE=5V, IC=10mA, f=100MHz Collector-Base Capacitance CCBO 4.5 pF VCB=10V, f=1MHz BC847BT 10 dB VCE=5V, IC=0.2mA Noise Figure NF BC847CT 4 dB RS=2KΩ, f=1KHz, BW=200Hz Note: 2. Short duration pulse test used to minimize self-heating effect. Rev.3-1-01012019 2/4 MCCSEMI.COM