Datasheet BC847ATT1, BC847BTT1, BC847CTT1 (ON Semiconductor) - 3

FabricanteON Semiconductor
DescripciónNPN Bipolar Transistor
Páginas / Página6 / 3 — BC847ATT1, BC847BTT1, BC847CTT1. Figure 1. Normalized DC Current Gain. …
Revisión3
Formato / tamaño de archivoPDF / 68 Kb
Idioma del documentoInglés

BC847ATT1, BC847BTT1, BC847CTT1. Figure 1. Normalized DC Current Gain. Figure 2. “Saturation” and “On” Voltages

BC847ATT1, BC847BTT1, BC847CTT1 Figure 1 Normalized DC Current Gain Figure 2 “Saturation” and “On” Voltages

Línea de modelo para esta hoja de datos

Versión de texto del documento

BC847ATT1, BC847BTT1, BC847CTT1
2.0 1.0 VCE = 10 V 0.9 T 1.5 A = 25°C GAIN TA = 25°C 0.8 VBE(sat) @ IC/IB = 10 1.0 0.7 TS) 0.8 0.6 VBE(on) @ VCE = 10 V 0.5 0.6 TAGE (VOL 0.4 , VOL 0.4 V 0.3 , NORMALIZED DC CURRENT 0.2 0.3 FE VCE(sat) @ IC/IB = 10 h 0.1 0.2 0 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mAdc) IC, COLLECTOR CURRENT (mAdc)
Figure 1. Normalized DC Current Gain Figure 2. “Saturation” and “On” Voltages
2.0 1.0 C) TA = 25°C ° -55°C to +125°C 1.2 TAGE (V) 1.6 (mV/ IC = 200 mA 1.6 1.2 I I I C = C = C = 50 mA IC = 100 mA COEFFICIENT 2.0 10 mA 20 mA OR-EMITTER VOL 0.8 TURE 2.4 0.4 , COLLECT 2.8 CE , TEMPERA V VBθ 0 0.02 0.1 1.0 10 20 0.2 1.0 10 100 IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 3. Collector Saturation Region Figure 4. Base−Emitter Temperature Coefficient http://onsemi.com 3