Datasheet BC856, BC857, BC858, BC859, BC860 (Infineon) - 2
| Fabricante | Infineon |
| Descripción | PNP Silicon AF Transistors |
| Páginas / Página | 10 / 2 — BC856...BC860. Maximum Ratings. Parameter. Symbol. Unit. Thermal … |
| Formato / tamaño de archivo | PDF / 168 Kb |
| Idioma del documento | Inglés |
BC856...BC860. Maximum Ratings. Parameter. Symbol. Unit. Thermal Resistance. Electrical Characteristics. Values. min. typ. max
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BC856...BC860 Maximum Ratings Parameter Symbol
BC856 BC857 BC858
Unit
BC860 BC859 Collector-emitter voltage VCEO 65 45 30 V Collector-base voltage VCBO 80 50 30 Collector-emitter voltage VCES 80 50 30 Emitter-base voltage VEBO 5 5 5 DC collector current IC 100 mA Peak collector current ICM 200 mA Peak base current IBM 200 Peak emitter current IEM 200 Total power dissipation, TS = 71 °C Ptot 330 mW Junction temperature Tj 150 °C Storage temperature Tstg -65 ... 150
Thermal Resistance
Junction - soldering point1) R ≤ thJS 240 K/W
Electrical Characteristics
at TA = 25°C, unless otherwise specified.
Parameter Symbol Values Unit min. typ. max. DC Characteristics
Collector-emitter breakdown voltage V(BR)CEO V IC = 10 mA, IB = 0 BC856 65 - - BC857/860 45 - - BC858/859 30 - - Collector-base breakdown voltage V(BR)CBO IC = 10 µA, IE = 0 BC856 80 - - BC857/860 50 - - BC858/859 30 - - 1For calculation of RthJA please refer to Application Note Thermal Resistance 2 Jan-28-2005
BC856 BC857 BC858
Unit
BC860 BC859 Collector-emitter voltage VCEO 65 45 30 V Collector-base voltage VCBO 80 50 30 Collector-emitter voltage VCES 80 50 30 Emitter-base voltage VEBO 5 5 5 DC collector current IC 100 mA Peak collector current ICM 200 mA Peak base current IBM 200 Peak emitter current IEM 200 Total power dissipation, TS = 71 °C Ptot 330 mW Junction temperature Tj 150 °C Storage temperature Tstg -65 ... 150
Thermal Resistance
Junction - soldering point1) R ≤ thJS 240 K/W
Electrical Characteristics
at TA = 25°C, unless otherwise specified.
Parameter Symbol Values Unit min. typ. max. DC Characteristics
Collector-emitter breakdown voltage V(BR)CEO V IC = 10 mA, IB = 0 BC856 65 - - BC857/860 45 - - BC858/859 30 - - Collector-base breakdown voltage V(BR)CBO IC = 10 µA, IE = 0 BC856 80 - - BC857/860 50 - - BC858/859 30 - - 1For calculation of RthJA please refer to Application Note Thermal Resistance 2 Jan-28-2005