Datasheet BC847PN (Diodes) - 2

BC847PN Absolute Maximum Ratings: NPN, BC847B Type (Q1)
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 45 V Emitter-Base Voltage VEBO 6 V Collector Current IC 100 mA Peak Collector Current ICM 200 mA Peak Emitter Current IEM 200 mA
Absolute Maximum Ratings: PNP, BC857B Type (Q2)
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -45 V Emitter-Base Voltage VEBO -6 V Collector Current IC -100 mA Peak Collector Current ICM -200 mA Peak Emitter Current IEM -200 mA
Thermal Characteristics – Total Device
(@TA = +25°C unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation (Note 5) Total Device PD 200 mW Thermal Resistance, Junction to Ambient (Note 5) RJA 625 °C/W Operating and Storage Temperature Range TJ, TSTG -65 to +150 °C Note: 5. For a device mounted on minimum recommended pad layout with 1oz copper that is on a single-sided 1.6mm FR-4 PCB; the device is measured under still air conditions whilst operating in a steady-state.
Thermal Characteristics – Total Device
250 ) W 200 m( NOITA 150PISSID R100E W O P , dP 50 0 0 40 80 120 160 200 T , AMBIENT TEMPERATURE ( C) ° A Fig. 1, Power Derating Curve (Total Device) BC847PN 2 of 6 June 2016 Document number: DS30278 Rev. 14 - 2
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