Datasheet BC856A, BC856B, BC857A, BC857B, BC857C, BC858A, BC858B, BC858c (Diodes) - 2

BC856A-BC858C Absolute Maximum Ratings
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
BC856 -80 Collector-Base Voltage BC857 VCBO -50 V BC858 -30 BC856 -65 Collector-Emitter Voltage BC857 VCEO -45 V BC858 -30 Emitter-Base Voltage VEBO -5.0 V Continuous Collector Current IC -100 mA Peak Collector Current ICM -200 mA Peak Emitter Current IEM -200 mA Peak Base Current IBM -200 mA
Thermal Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
(Note 6) 310 Power Dissipation PD mW (Note 7) 350 (Note 6) 403 Thermal Resistance, Junction to Ambient RθJA °C/W (Note 7) 357 Thermal Resistance, Junction to Leads (Note 8) RθJL 350 °C/W Operating and Storage Temperature Range TJ,TSTG -65 to +150 °C
ESD Ratings
(Note 9)
Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 400 V C Notes: 6. For a device mounted on minimum recommended pad layout 1oz copper that is on a single-sided FR4 PCB; device is measured under still air conditions whilst operating in a steady-state. 7. Same as Note 6, except the device is mounted on 15 mm x 15mm 1oz copper. 8. Thermal resistance from junction to solder-point (at the end of the leads). 9. Refer to JEDEC specification JESD22-A114 and JESD22-A115. BC856A – BC858C 2 of 7 October 2014 Document Number: DS11207 Rev. 24 - 2
www.diodes.com
© Diodes Incorporated