Datasheet BC856AW, BC856BW, BC857AW, BC857BW, BC857CW, BC858AW, BC858BW, BC858CW (Diodes) - 2

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BC856AW-BC858CW. Absolute Maximum Ratings. Characteristic. Symbol. Value. Unit. Thermal Characteristics. Electrical Characteristics

BC856AW-BC858CW Absolute Maximum Ratings Characteristic Symbol Value Unit Thermal Characteristics Electrical Characteristics

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BC856AW-BC858CW Absolute Maximum Ratings
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
BC856 -80 Collector-Base Voltage BC857 VCBO -50 V BC858 -30 BC856 -65 Collector-Emitter Voltage BC857 VCEO -45 V BC858 -30 Emitter-Base Voltage VEBO -5.0 V Continuous Collector Current IC -100 mA Peak Collector Current ICM -200 mA Peak Emitter Current IEM -200 mA
Thermal Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation (Note 6) PD 200 mW Thermal Resistance, Junction to Ambient (Note 6) RϴJA 625 °C/W Operating and Storage Temperature Range TJ, TSTG -65 to +150 °C
Electrical Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
BC856 -80 Collector-Base Breakdown Voltage BC857 BVCBO -50 — — V IC = -100nA BC858 -30 BC856 -65 Collector-Emitter Breakdown Voltage (Note 7) BC857 BVCEO -45 — — V IC = -10mA BC858 -30 Emitter-Base Breakdown Voltage BVEBO -5 — — V IE = -100nA A 125 180 250 DC Current Gain (Note 7) Current Gain Group B hFE 220 290 475 — VCE = -5.0V, IC = -2.0mA C 420 520 800 -15 nA V Collector Cutoff Current CB = -30V ICBO — — -4 µA VCB = -30V, TA = +150°C -75 -300 I Collector-Emitter Saturation Voltage (Note 7) C = -10mA, IB = -0.5mA VCE(sat) — mV -250 -650 IC = -100mA, IB = -5.0mA -600 -650 -750 I Base-Emitter Turn-On Voltage (Note 7) C = -2mA, VCE = -5V VBE(on) mV — — -820 IC = -10mA, VCE = -5V -700 — I Base-Emitter Saturation Voltage (Note 7) C = -10mA, IB = -0.5mA VBE(sat) — mV -850 -950 IC = -100mA, IB = -5mA Output Capacitance Cobo — 3 4.5 pF VCB = -10V, f = 1.0MHz V Transition Frequency f CE = -5V, IC = -10mA, T 100 200 — MHz f = 100MHz VCE = -5V, IC = -200µA Noise Figure NF — — 10 dB RS = 2kΩ, f = 1kHz ∆f = 200Hz Notes: 6. For a device mounted on minimum recommended pad layout 1oz copper that is on a single-sided FR4 PCB; device is measured under still air conditions whilst operating in a steady-state. 7. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2% BC856AW – BC858CW 2 of 5 November 2018 Document Number: DS30251 Rev. 11 - 2
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© Diodes Incorporated Document Outline Mechanical Data Characteristic Symbol Value Unit Characteristic Features Marking Information Package Outline Dimensions Suggested Pad Layout