Datasheet BC846ALT1G (ON Semiconductor) - 7

FabricanteON Semiconductor
DescripciónNPN Bipolar Transistor
Páginas / Página13 / 7 — BC846ALT1G Series. BC847B, BC848B, BC849B, BC850B, SBC847B, SBC848B. …
Revisión17
Formato / tamaño de archivoPDF / 111 Kb
Idioma del documentoInglés

BC846ALT1G Series. BC847B, BC848B, BC849B, BC850B, SBC847B, SBC848B. Figure 19. DC Current Gain vs. Collector

BC846ALT1G Series BC847B, BC848B, BC849B, BC850B, SBC847B, SBC848B Figure 19 DC Current Gain vs Collector

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BC846ALT1G Series BC847B, BC848B, BC849B, BC850B, SBC847B, SBC848B
600 600 VCE = 1 V VCE = 5 V 150°C 150°C 500 500 400 400 25°C 25°C 300 300 200 −55°C 200 −55°C , DC CURRENT GAIN , DC CURRENT GAIN FE FE h h 100 100 0 0 0.001 0.01 0.1 1 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 19. DC Current Gain vs. Collector Figure 20. DC Current Gain vs. Collector Current Current
0.30 IC/IB = 20 0.25 150°C AGE (V) 0.20 T OR−EMITTER 25°C 0.15 TION VOL 0.10 , COLLECT −55°C TURA SA 0.05 CE(sat)V 0 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A)
Figure 21. Collector Emitter Saturation Voltage vs. Collector Current
1.1 1.2 1.0 I 1.1 V C/IB = 20 CE = 5 V −55°C AGE (V) 1.0 0.9 T 25°C −55°C 0.9 AGE (V) 0.8 T 0.8 25°C 0.7 150°C 0.7 0.6 0.6 , BASE−EMITTER TION VOL 150°C 0.5 sat) 0.5 BE( TURA V 0.4 , BASE−EMITTER VOL 0.4 SA 0.3 on) 0.3 BE( 0.2 V 0.2 0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 22. Base Emitter Saturation Voltage vs. Figure 23. Base Emitter Voltage vs. Collector Collector Current Current www.onsemi.com 7