Datasheet BC846ALT1G (ON Semiconductor) - 2

FabricanteON Semiconductor
DescripciónNPN Bipolar Transistor
Páginas / Página13 / 2 — BC846ALT1G Series. ELECTRICAL CHARACTERISTICS. Characteristic. Symbol. …
Revisión17
Formato / tamaño de archivoPDF / 111 Kb
Idioma del documentoInglés

BC846ALT1G Series. ELECTRICAL CHARACTERISTICS. Characteristic. Symbol. Min. Typ. Max. Unit. OFF CHARACTERISTICS. ON CHARACTERISTICS

BC846ALT1G Series ELECTRICAL CHARACTERISTICS Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS ON CHARACTERISTICS

Línea de modelo para esta hoja de datos

Versión de texto del documento

BC846ALT1G Series ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS
Collector − Emitter Breakdown Voltage BC846A, B V(BR)CEO 65 − − V (IC = 10 mA) BC847A, B, C, BC850B, C 45 − − BC848A, B, C, BC849B, C 30 − − Collector − Emitter Breakdown Voltage BC846A, B V(BR)CES 80 − − V (IC = 10 mA, VEB = 0) BC847A, B, C BC850B, C 50 − − BC848A, B, C, BC849B, C 30 − − Collector − Base Breakdown Voltage BC846A, B V(BR)CBO 80 − − V (IC = 10 mA) BC847A, B, C, BC850B, C 50 − − BC848A, B, C, BC849B, C 30 − − Emitter − Base Breakdown Voltage BC846A, B V(BR)EBO 6.0 − − V (IE = 1.0 mA) BC847A, B, C, BC850B, C 6.0 − − BC848A, B, C, BC849B, C 5.0 − − Collector Cutoff Current (VCB = 30 V) ICBO − − 15 nA (VCB = 30 V, TA = 150°C) − − 5.0 mA
ON CHARACTERISTICS
DC Current Gain BC846A, BC847A, BC848A hFE − 90 − − (IC = 10 mA, VCE = 5.0 V) BC846B, BC847B, BC848B − 150 − BC847C, BC848C − 270 − (IC = 2.0 mA, VCE = 5.0 V) BC846A, BC847A, BC848A 110 180 220 BC846B, BC847B, BC848B, 200 290 450 BC849B, BC850B BC847C, BC848C, BC849C, BC850C 420 520 800 Collector − Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) VCE(sat) − − 0.25 V Collector − Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) − − 0.6 Base − Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) VBE(sat) − 0.7 − V Base − Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) − 0.9 − Base − Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V) VBE(on) 580 660 700 mV Base − Emitter Voltage (IC = 10 mA, VCE = 5.0 V) − − 770
SMALL− SIGNAL CHARACTERISTICS
Current − Gain − Bandwidth Product fT 100 − − MHz (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 V, f = 1.0 MHz) Cobo − − 4.5 pF Noise Figure (IC = 0.2 mA, NF dB VCE = 5.0 Vdc, RS = 2.0 kW, BC846A,B, BC847A,B,C, BC848A,B,C − − 10 f = 1.0 kHz, BW = 200 Hz) BC849B,C, BC850B,C − − 4.0 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com 2