Datasheet BC846BPN (NXP) - 6
| Fabricante | NXP |
| Descripción | 65 V, 100 mA NPN/PNP general-purpose transistor |
| Páginas / Página | 15 / 6 — NXP Semiconductors. BC846BPN. 65 V, 100 mA NPN/PNP general-purpose … |
| Formato / tamaño de archivo | PDF / 133 Kb |
| Idioma del documento | Inglés |
NXP Semiconductors. BC846BPN. 65 V, 100 mA NPN/PNP general-purpose transistor. Table 8. Characteristics. Symbol Parameter
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NXP Semiconductors BC846BPN 65 V, 100 mA NPN/PNP general-purpose transistor Table 8. Characteristics
…continued Tamb = 25 °C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
VBEsat base-emitter IC = −10 mA; - −755 −850 mV saturation voltage IB = −0.5 mA IC = −100 mA; IB = −5 mA - −900 - mV VBE base-emitter voltage VCE = −5 V IC = −2 mA −600 −650 −750 mV IC = −10 mA - - −820 mV Cc collector capacitance VCB = −10 V; IE = ie = 0 A; - 2.3 - pF f = 1 MHz Ce emitter capacitance VEB = −0.5 V; - 10 - pF IC = ic = 0 A; f = 1 MHz fT transition frequency VCE = −5 V; IC = −10 mA; 100 - - MHz f = 100 MHz NF noise figure VCE = −5 V; IC = −0.2 mA; - 1.6 - dB RS = 2 kΩ; f = 10 Hz to 15.7 kHz VCE = −5 V; IC = −0.2 mA; - 2.9 - dB RS = 2 kΩ; f = 1 kHz; B = 200 Hz 006aaa533 006aaa532 600 0.20 IB (mA) = 4.50 IC 4.05 3.60 h (A) FE 3.15 0.16 2.70 2.25 400 (1) 1.80 0.12 1.35 0.90 (2) 0.08 0.45 200 (3) 0.04 0 0 10−2 1 103 102 10−1 10 0 2 4 6 8 10 IC (mA) VCE (V) VCE = 5 V Tamb = 25 °C (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C
Fig 3. TR1 (NPN): DC current gain as a function of Fig 4. TR1 (NPN): Collector current as a function of collector current; typical values collector-emitter voltage; typical values
BC846BPN_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 17 July 2009 6 of 15
Document Outline 1. Product profile 1.1 General description 1.2 Features 1.3 Applications 1.4 Quick reference data 2. Pinning information 3. Ordering information 4. Marking 5. Limiting values 6. Thermal characteristics 7. Characteristics 8. Test information 8.1 Quality information 9. Package outline 10. Packing information 11. Soldering 12. Revision history 13. Legal information 13.1 Data sheet status 13.2 Definitions 13.3 Disclaimers 13.4 Trademarks 14. Contact information 15. Contents
…continued Tamb = 25 °C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
VBEsat base-emitter IC = −10 mA; - −755 −850 mV saturation voltage IB = −0.5 mA IC = −100 mA; IB = −5 mA - −900 - mV VBE base-emitter voltage VCE = −5 V IC = −2 mA −600 −650 −750 mV IC = −10 mA - - −820 mV Cc collector capacitance VCB = −10 V; IE = ie = 0 A; - 2.3 - pF f = 1 MHz Ce emitter capacitance VEB = −0.5 V; - 10 - pF IC = ic = 0 A; f = 1 MHz fT transition frequency VCE = −5 V; IC = −10 mA; 100 - - MHz f = 100 MHz NF noise figure VCE = −5 V; IC = −0.2 mA; - 1.6 - dB RS = 2 kΩ; f = 10 Hz to 15.7 kHz VCE = −5 V; IC = −0.2 mA; - 2.9 - dB RS = 2 kΩ; f = 1 kHz; B = 200 Hz 006aaa533 006aaa532 600 0.20 IB (mA) = 4.50 IC 4.05 3.60 h (A) FE 3.15 0.16 2.70 2.25 400 (1) 1.80 0.12 1.35 0.90 (2) 0.08 0.45 200 (3) 0.04 0 0 10−2 1 103 102 10−1 10 0 2 4 6 8 10 IC (mA) VCE (V) VCE = 5 V Tamb = 25 °C (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C
Fig 3. TR1 (NPN): DC current gain as a function of Fig 4. TR1 (NPN): Collector current as a function of collector current; typical values collector-emitter voltage; typical values
BC846BPN_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 17 July 2009 6 of 15
Document Outline 1. Product profile 1.1 General description 1.2 Features 1.3 Applications 1.4 Quick reference data 2. Pinning information 3. Ordering information 4. Marking 5. Limiting values 6. Thermal characteristics 7. Characteristics 8. Test information 8.1 Quality information 9. Package outline 10. Packing information 11. Soldering 12. Revision history 13. Legal information 13.1 Data sheet status 13.2 Definitions 13.3 Disclaimers 13.4 Trademarks 14. Contact information 15. Contents