Datasheet BC846BS (NXP)
| Fabricante | NXP |
| Descripción | 65 V, 100 mA NPN/NPN general-purpose transistor pair |
| Páginas / Página | 12 / 1 — BC846BS 65 V, 100 mA NPN/NPN general-purpose transistor. Rev. 01 — 24 … |
| Formato / tamaño de archivo | PDF / 101 Kb |
| Idioma del documento | Inglés |
BC846BS 65 V, 100 mA NPN/NPN general-purpose transistor. Rev. 01 — 24 August 2009. Product data sheet. Product profile
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BC846BS 65 V, 100 mA NPN/NPN general-purpose transistor Rev. 01 — 24 August 2009 Product data sheet 1. Product profile 1.1 General description
NPN/NPN general-purpose transistor pair in a very small Surface-Mounted Device (SMD) plastic package.
Table 1. Product overview Type number Package PNP/PNP NPN/PNP complement complement NXP JEITA
BC846BS SOT363 SC-88 BC856BS BC846BPN
1.2 Features
n Low collector capacitance n Low collector-emitter saturation voltage n Closely matched current gain n Reduces number of components and board space n No mutual interference between the transistors n AEC-Q101 qualified
1.3 Applications
n General-purpose switching and amplification
1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor
VCEO collector-emitter voltage open base - - 65 V IC collector current - - 100 mA hFE DC current gain VCE = 5 V; IC = 2 mA 200 300 450 Document Outline 1. Product profile 1.1 General description 1.2 Features 1.3 Applications 1.4 Quick reference data 2. Pinning information 3. Ordering information 4. Marking 5. Limiting values 6. Thermal characteristics 7. Characteristics 8. Test information 8.1 Quality information 9. Package outline 10. Packing information 11. Soldering 12. Revision history 13. Legal information 13.1 Data sheet status 13.2 Definitions 13.3 Disclaimers 13.4 Trademarks 14. Contact information 15. Contents
NPN/NPN general-purpose transistor pair in a very small Surface-Mounted Device (SMD) plastic package.
Table 1. Product overview Type number Package PNP/PNP NPN/PNP complement complement NXP JEITA
BC846BS SOT363 SC-88 BC856BS BC846BPN
1.2 Features
n Low collector capacitance n Low collector-emitter saturation voltage n Closely matched current gain n Reduces number of components and board space n No mutual interference between the transistors n AEC-Q101 qualified
1.3 Applications
n General-purpose switching and amplification
1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor
VCEO collector-emitter voltage open base - - 65 V IC collector current - - 100 mA hFE DC current gain VCE = 5 V; IC = 2 mA 200 300 450 Document Outline 1. Product profile 1.1 General description 1.2 Features 1.3 Applications 1.4 Quick reference data 2. Pinning information 3. Ordering information 4. Marking 5. Limiting values 6. Thermal characteristics 7. Characteristics 8. Test information 8.1 Quality information 9. Package outline 10. Packing information 11. Soldering 12. Revision history 13. Legal information 13.1 Data sheet status 13.2 Definitions 13.3 Disclaimers 13.4 Trademarks 14. Contact information 15. Contents