Datasheet BC546, BC846 (NXP) - 6
| Fabricante | NXP |
| Descripción | NPN general-purpose transistors in Surface Mounted Device (SMD) plastic packages |
| Páginas / Página | 14 / 6 — NXP Semiconductors. BC846/BC546 series. 65 V, 100 mA NPN general-purpose … |
| Formato / tamaño de archivo | PDF / 382 Kb |
| Idioma del documento | Inglés |
NXP Semiconductors. BC846/BC546 series. 65 V, 100 mA NPN general-purpose transistors. Fig 1
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BC546
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NXP Semiconductors BC846/BC546 series 65 V, 100 mA NPN general-purpose transistors
mgt723 mgt724 400 1200 VBE h (mV) FE 1000 (1) 300 (1) 800 (2) 200 (2) 600 (3) 400 (3) 100 200 0 0 10−1 1 10 102 103 10−1 1 10 102 103 IC (mA) IC (mA) VCE = 5 V VCE = 5 V (1) Tamb = 150 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −55 °C (3) Tamb = 150 °C
Fig 1. Selection A: DC current gain as a function of Fig 2. Selection A: Base-emitter voltage as a function collector current; typical values of collector current; typical values
mgt725 mgt726 103 1200 VBEsat V (mV) CEsat (mV) 1000 (1) 800 (2) 102 600 (1) (3) (2) 400 (3) 200 10 0 10−1 1 10 102 103 10−1 1 10 102 103 IC (mA) IC (mA) IC/IB = 20 IC/IB = 10 (1) Tamb = 150 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −55 °C (3) Tamb = 150 °C
Fig 3. Selection A: Collector-emitter saturation Fig 4. Selection A: Base-emitter saturation voltage voltage as a function of collector current; as a function of collector current; typical typical values values
BC846_BC546_SER_7 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 07 — 17 November 2009 6 of 14
Document Outline 1. Product profile 1.1 General description 1.2 Features 1.3 Applications 1.4 Quick reference data 2. Pinning information 3. Ordering information 4. Marking 5. Limiting values 6. Thermal characteristics 7. Characteristics 8. Package outline 9. Packing information 10. Soldering 11. Revision history 12. Legal information 12.1 Data sheet status 12.2 Definitions 12.3 Disclaimers 12.4 Trademarks 13. Contact information 14. Contents
mgt723 mgt724 400 1200 VBE h (mV) FE 1000 (1) 300 (1) 800 (2) 200 (2) 600 (3) 400 (3) 100 200 0 0 10−1 1 10 102 103 10−1 1 10 102 103 IC (mA) IC (mA) VCE = 5 V VCE = 5 V (1) Tamb = 150 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −55 °C (3) Tamb = 150 °C
Fig 1. Selection A: DC current gain as a function of Fig 2. Selection A: Base-emitter voltage as a function collector current; typical values of collector current; typical values
mgt725 mgt726 103 1200 VBEsat V (mV) CEsat (mV) 1000 (1) 800 (2) 102 600 (1) (3) (2) 400 (3) 200 10 0 10−1 1 10 102 103 10−1 1 10 102 103 IC (mA) IC (mA) IC/IB = 20 IC/IB = 10 (1) Tamb = 150 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −55 °C (3) Tamb = 150 °C
Fig 3. Selection A: Collector-emitter saturation Fig 4. Selection A: Base-emitter saturation voltage voltage as a function of collector current; as a function of collector current; typical typical values values
BC846_BC546_SER_7 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 07 — 17 November 2009 6 of 14
Document Outline 1. Product profile 1.1 General description 1.2 Features 1.3 Applications 1.4 Quick reference data 2. Pinning information 3. Ordering information 4. Marking 5. Limiting values 6. Thermal characteristics 7. Characteristics 8. Package outline 9. Packing information 10. Soldering 11. Revision history 12. Legal information 12.1 Data sheet status 12.2 Definitions 12.3 Disclaimers 12.4 Trademarks 13. Contact information 14. Contents