Datasheet HMC996LP4E (Analog Devices)

FabricanteAnalog Devices
DescripciónAnalog Variable Gain Amplifier SMT, 5 - 12 GHz
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HMC996LP4E. VARIABLE GAIN AMPLIFIER. 5 - 12 GHz. Typical Applications. Features. Functional Diagram. General Description

Datasheet HMC996LP4E Analog Devices

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HMC996LP4E
v01.0112
VARIABLE GAIN AMPLIFIER 5 - 12 GHz Typical Applications Features
The HmC996lp4e is ideal for: Wide Gain Control range: 22 db T • Point-to-Point Radio Single Control Voltage: -1 to -4.5V m • Point-to-Multi-Point Radio Output ip3 @ max Gain: +34 dbm • EW & ECM Subsystems Output p1db: +22 dbm r - S low noise figure 2db @ max gain • X-Band Radar no external matching ie • Test Equipment & Sensors 24 lead 4x4 mm SmT package: 16 mm2 lif
Functional Diagram
p m
General Description
a The HmC996lp4e is a Gaas pHemT mmiC analog in variable gain amplifier and / or driver amplifier which a operates between 5 and 12 GHz. ideal for microwave radio applications, the amplifier provides up to 18.5 db of gain, output p1db of up to +23 dbm, and up le G to +34 dbm of output ip3 at maximum gain, while b requiring only 170 ma from a +5V supply. Gain control voltage pin (Vctrl) is provided to al ow variable ia gain control up to 22 db. Gain flatness is excel ent r a making the HmC996lp4e ideal for eW, eCm and V radar applications. The HmC996lp4e is housed in a roHS compliant 4 x 4 mm Qfn leadless package and is compatible with high volume surface mount manufacturing.
Electrical Specifications, T = +25°C, Vdd1, 2= 5V, Vctrl= -4.5V, Idd= 120 mA* A
parameter min. Typ. max. min. Typ. max. Units frequency range 5 - 8.5 8.5 - 12 GHz Gain 16 18.5 13 16 db Gain flatness ±0.5 ±1 db Gain Variation Over Temperature 0.006 0.006 db/ °C Gain Control range 15 22 15 20 db noise figure 2.5 2 db input return loss 17 9 db Output return loss 23 7 db Output power for 1 db Compression (p1db) 19 22 20 23 dbm Saturated Output power (psat) 23 24 dbm Output Third Order intercept (ip3) 34 34 dbm Total Supply Current (idd) 120 120 ma *Set Vctrl = -4.5V and then adjust Vgg1, 2 between -2V to 0V to achieve idd = 120 ma typical. Inf F or o m r p atio r n ifc ur e n , d ishe e d lbiv y e A r n y a alog n D d t evic o p es is la beclie o eved rd to ebre sa: H ccur iattti e tae M nd re ilicarbloew . H a o ve C wever, o n rp o For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other oration, 2 Elizabeth Drive, Chelmsford, MA 01824 One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 978-250-3343 Fax: 978-250-3373 O rights of third parties that may result from its use. Specifications subject to change without notice. No P rd ho e ne r O : 7 n 81- -3li 2n 9 e a -47 t w 0 w 0 • O w rd .h e it r o tniltie n .c e ao t m
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