Datasheet IRFF9120, JANTX2N6845, JANTXV2N6845 (International Rectifier)
| Fabricante | International Rectifier |
| Descripción | 100V, P-CHANNEL MOSFET TO-205AF (TO-39) |
| Páginas / Página | 7 / 1 — PD-90552E. IRFF9120. JANTX2N6845. JANTXV2N6845. REPETITIVE AVALANCHE AND … |
| Formato / tamaño de archivo | PDF / 905 Kb |
| Idioma del documento | Inglés |
PD-90552E. IRFF9120. JANTX2N6845. JANTXV2N6845. REPETITIVE AVALANCHE AND dv/dt RATED. 100V, P-CHANNEL. HEXFET® TRANSISTORS
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PD-90552E IRFF9120 JANTX2N6845 JANTXV2N6845 REPETITIVE AVALANCHE AND dv/dt RATED 100V, P-CHANNEL HEXFET® TRANSISTORS REF: MIL-PRF-19500/563 THRU-HOLE TO-205AF (TO-39) Product Summary Part Number BVDSS RDS(on) ID
IRFF9120 -100V 0.60 -4.0A
TO-39 Description Features
Repetitive Avalanche Ratings The HEXFET® technology is the key to International Dynamic dv/dt Rating Rectifier’s HiRel advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest Hermetically Sealed “State of the Art” design achieves: very low on state Simple Drive Requirements resistance combined with high trans conductance. ESD Rating: Class 1B per MIL-STD-750, Method 1020 The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching and temperature stability of the electrical parameters. They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.
Absolute Maximum Ratings Symbol Parameter Value Units
ID1 @ VGS = -10V, TC = 25°C Continuous Drain Current -4.0 I A D2 @ VGS = -10V, TC = 100°C Continuous Drain Current -2.6 IDM @ TC = 25°C Pulsed Drain Current -16 PD @ TC = 25°C Maximum Power Dissipation 20 W Linear Derating Factor 0.16 W/°C VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy 364 mJ IAR Avalanche Current -4.0 A EAR Repetitive Avalanche Energy 2.0 mJ dv/dt Peak Diode Recovery dv/dt -5.0 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range °C Lead Temperature 300 (0.063 in. /1.6 mm from case for 10s) Weight 0.98 (Typical) g For Footnotes, refer to the page 2. 1 International Rectifier HiRel Products, Inc. 2018-12-05
IRFF9120 -100V 0.60 -4.0A
TO-39 Description Features
Repetitive Avalanche Ratings The HEXFET® technology is the key to International Dynamic dv/dt Rating Rectifier’s HiRel advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest Hermetically Sealed “State of the Art” design achieves: very low on state Simple Drive Requirements resistance combined with high trans conductance. ESD Rating: Class 1B per MIL-STD-750, Method 1020 The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching and temperature stability of the electrical parameters. They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.
Absolute Maximum Ratings Symbol Parameter Value Units
ID1 @ VGS = -10V, TC = 25°C Continuous Drain Current -4.0 I A D2 @ VGS = -10V, TC = 100°C Continuous Drain Current -2.6 IDM @ TC = 25°C Pulsed Drain Current -16 PD @ TC = 25°C Maximum Power Dissipation 20 W Linear Derating Factor 0.16 W/°C VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy 364 mJ IAR Avalanche Current -4.0 A EAR Repetitive Avalanche Energy 2.0 mJ dv/dt Peak Diode Recovery dv/dt -5.0 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range °C Lead Temperature 300 (0.063 in. /1.6 mm from case for 10s) Weight 0.98 (Typical) g For Footnotes, refer to the page 2. 1 International Rectifier HiRel Products, Inc. 2018-12-05