Datasheet IRF540NS, IRF540NL (International Rectifier) - 4
| Fabricante | International Rectifier |
| Descripción | HEXFET Power MOSFET |
| Páginas / Página | 11 / 4 — Fig 5. Fig 6. Fig 7. Fig 8 |
| Formato / tamaño de archivo | PDF / 284 Kb |
| Idioma del documento | Inglés |
Fig 5. Fig 6. Fig 7. Fig 8
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IRF540NS/IRF540NL 3000 20 VGS = 0V, f = 1MHz ID = 16A C = C + C C SHORTED iss gs gd , ds C = C V = 80V DS 2500 rss gd C = C + C V = 50V oss ds gd DS 16 V = 20V DS C 2000 iss 12 1500 8 1000 C, Capacitance (pF) Coss 4 500 GSV , Gate-to-Source Voltage (V) Crss FOR TEST CIRCUIT SEE FIGURE 13 0 0 1 10 100 0 20 40 60 80 V , Drain-to-Source Voltage (V) DS Q , Total Gate Charge (nC) G
Fig 5.
Typical Capacitance Vs.
Fig 6.
Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA ) LIMITED BY RDS(on) A( 100 t 100 nerr T = 175 C u J ° C ecr 100µsec 10 u 10 o S-ot T = 25 C - J ° n 1msec iar 1 D 1 I , Reverse Drain Current (A) SD , TA = 25°C 10msec I D TJ = 175°C V = 0 V GS Single Pulse 0.10.2 0.6 1.0 1.4 1.8 0.1 V ,Source-to-Drain Voltage (V) 1 10 100 1000 SD VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Fig 8.
Maximum Safe Operating Area Forward Voltage 4 www.irf.com
Fig 5.
Typical Capacitance Vs.
Fig 6.
Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA ) LIMITED BY RDS(on) A( 100 t 100 nerr T = 175 C u J ° C ecr 100µsec 10 u 10 o S-ot T = 25 C - J ° n 1msec iar 1 D 1 I , Reverse Drain Current (A) SD , TA = 25°C 10msec I D TJ = 175°C V = 0 V GS Single Pulse 0.10.2 0.6 1.0 1.4 1.8 0.1 V ,Source-to-Drain Voltage (V) 1 10 100 1000 SD VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Fig 8.
Maximum Safe Operating Area Forward Voltage 4 www.irf.com