Datasheet PZT2222A (ON Semiconductor) - 4

PZT2222A TYPICAL CHARACTERISTICS
1000 2.0 V TA = 25°C CE = 6 V 1.8 TA = 150°C 1.6 1.4 TA = 25°C −EMITTER TAGE (V) OR 1.2 = 1 mA 10 mA 100 mA 300 mA 600 mA I C 100 1.0 TA = −55°C 0.8 TION VOL , DC CURRENT GAIN , COLLECT 0.6 TURA h FE 0.4 SA V CE(sat) 0.2 10 0 0.1 1 10 100 1000 0.001 0.01 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) IB, BASE CURRENT (mA)
Figure 5. DC Current Gain vs. Collector Figure 6. Saturation Region Current
1.1 100 VCE = 2 V 1.0 TAGE (V) 0.9 TA = −55°C Cibo 0.8 0.7 ANCE (pF) T C A = 25°C 10 obo 0.6 ACIT −EMITTER ON VOL 0.5 0.4 C, CAP , BASE TA = 150°C 0.3 (ON) E 0.2 1 V B 0.1 1 10 100 1000 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (V)
Figure 7. Base−Emitter Turn−On Voltage vs. Figure 8. Capacitance Collector Current
1000 1 s 0.0001 0.1 0.01 100 0.001 OR CURRENT (mA) 10 , COLLECT I C Single Pulse Test at TA = 25°C 1 1 10 100 VCE, COLLECTOR EMITTER VOLTAGE (V)
Figure 9. Safe Operating Area www.onsemi.com 4