Datasheet IRF9510S, SiHF9510S (Vishay) - 6
| Fabricante | Vishay |
| Descripción | Power MOSFET |
| Páginas / Página | 9 / 6 — IRF9510S, SiHF9510S. Fig. 12c - Maximum Avalanche Energy vs. Drain … |
| Formato / tamaño de archivo | PDF / 179 Kb |
| Idioma del documento | Inglés |
IRF9510S, SiHF9510S. Fig. 12c - Maximum Avalanche Energy vs. Drain Current. Fig. 13a - Basic Gate Charge Waveform
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IRF9510S, SiHF9510S
Vishay Siliconix 700 ID Top 600 - 1.6 A - 2.8 A Bottom - 4.0 A 500 400 300 200 , Single Pulse Energy (mJ) AS 100 E V = - 25 V DD 0 25 50 75 100 125 150 175 91073_12c Starting TJ, Junction Temperature (°C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator Same type as D.U.T. Q 50 kΩ G - 10 V 12 V 0.2 µF 0.3 µF Q Q - GS GD + V D.U.T. DS VG VGS - 3 mA Charge I I G D Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit
www.vishay.com Document Number: 91073 6 S11-1050-Rev. C, 30-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Vishay Siliconix 700 ID Top 600 - 1.6 A - 2.8 A Bottom - 4.0 A 500 400 300 200 , Single Pulse Energy (mJ) AS 100 E V = - 25 V DD 0 25 50 75 100 125 150 175 91073_12c Starting TJ, Junction Temperature (°C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator Same type as D.U.T. Q 50 kΩ G - 10 V 12 V 0.2 µF 0.3 µF Q Q - GS GD + V D.U.T. DS VG VGS - 3 mA Charge I I G D Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit
www.vishay.com Document Number: 91073 6 S11-1050-Rev. C, 30-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000