TSCR400CX6H / TSCR402CX6H Taiwan Semiconductor TSCR400CX6H CHARACTERISTICS CURVES 100 1.2 REXT = 710 Ω 1.1 10 ) A) A(m 1 T(m TI OU 1 I OU 0.9 0 0.8 0.01 0.10 1.00 10.00 100.00 -40 -20 0 20 40 60 80 RAmbient Temperature ( ℃ )EXT (kΩ)Figure 1. IOUT vs. REXTFigure 2. IOUT vs. TA (REXT=710Ω) 0.75 1,000 0.7 100 (V))A 0.65 OP 10 R(mDVI C 0.6 1 0.55 0 0 1 10 100 1,000 1 10 100 1,000 IC (mA)REXT (Ω)Figure 3. VDROP vs ICFigure 4. IC vs REXTVDROP = f(IC) refer to stabilized NPN TransistorCollector Current IC = f(REXT) refer to stabilizedNPN Transistor 1,000 1.2 2.1Ω ) 5.3Ω 1 100 (W 13Ω n o 0.8 i)tAa pm 69Ω i 10 0.6 (ssiI CD r 0.4 e 750Ω 1 w o 0.2 P 4.3kΩ 0 0 0 20 40 60 80 100 120 140 160 0 2 4 6 8 10 VAmbient Temperature ( ℃ )S(V)Figure 5. IC vs. VSFigure 6. PD vs. Ambient TemperatureCollector Current IC = f(VS) refer to stabilized NPN Transistor 4 Version: A1905