Datasheet ADL6010S (Analog Devices) - 6
| Fabricante | Analog Devices |
| Descripción | Aerospace ADL6010S Fast Responding, 45 dB Range, 0.5 GHz TO 43.5 GHz Envelope Detector |
| Páginas / Página | 8 / 6 — ADL6010S. Table II – Electrical Performance Characteristics – Continued. … |
| Revisión | C |
| Formato / tamaño de archivo | PDF / 199 Kb |
| Idioma del documento | Inglés |
ADL6010S. Table II – Electrical Performance Characteristics – Continued. Parameter. Conditions 1/. Limits. Symbol. Subgroup. Unit
Versión de texto del documento
ADL6010S Table II – Electrical Performance Characteristics – Continued Parameter Conditions 1/ Limits Symbol Subgroup Unit see notes at end of table unless otherwise specified Min Max Frequency = 35GHz Continuous Wave (CW) Input
Deviation vs. Temperature 2/ RFin = +10dBm 4,5,6 -1.2 1.2 (Deviation from output at 25°C) DevT dB 2/ RFin = -10dBm 4,5,6 -2.2 1.2 55°C < TA <+125°C Slope Slope 2/ 3/ 4/ LSqR of 7 points 4,5,6 1.7 3 V/ Vpeak Intercept Intercept 2/ 3/ 4/ LSqR of 7 points 4,5,6 -0.1 0.1 V 2/ RFin = +10 dB 4,5,6 1.9 3 Output Voltage Vout V 2/ RFin = -10 dB 4,5,6 0 0.35
Frequency = 40GHz Continuous Wave (CW) Input
Deviation vs. Temperature 2/ RFin = +10dBm 4,5,6 -1.2 1.2 (Deviation from output at 25°C) DevT dB 2/ RFin = -10dBm 4,5,6 -2.0 1.2 55°C < TA <+125°C Slope Slope 2/ 3/ 4/ LSqR of 7 points 4,5,6 1.6 3 V/ Vpeak Intercept Intercept 2/ 3/ 4/ LSqR of 7 points 4,5,6 -0.1 0.1 V 2/ RFin = +10 dBm 4,5,6 1.6 3 Output Voltage Vout V 2/ RFin = -10 dBm 4,5,6 0 0.35
Frequency = 43.5GHz Continuous Wave (CW) Input
Deviation vs. Temperature 2/ RFin = +10dBm 4,5,6 -1.2 1.2 (Deviation from output at 25°C) DevT dB 2/ RFin = -10dBm 4,5,6 -2.2 1.6 55°C < TA <+125°C Slope Slope 2/ 3/ 4/ LSqR of 7 points 4,5,6 1.5 2.6 V/ Vpeak Intercept Intercept 2/ 3/ 4/ LSqR of 7 points 4,5,6 -0.1 0.1 V 2/ RFin = +10 dBm 4,5,6 1.5 2.6 Output Voltage V Vout 2/ RFin = -10 dBm 4,5,6 0 0.25 Table II Notes: 1/ VPOS = 5.0 V, TA nom = 25ºC, TA max = 125ºC, and TA min = -55ºC, RFin = 50 Ω source impedance, unless otherwise noted. 2/ Parameter is part of device initial characterization which is only repeated after design and process changes or with subsequent wafer lots. Parameter is not tested post irradiation. 3/ The Intercept specification is defined as the calculated crossing point of the RFin = 0.0Vpk axis of a line defined by the calibration points plotted as Vout (in volts) verses RFin (in volts peak), not the 0 dBm axis crossing. The Slope specification is defined as the calculated slope of a line defined by the calibration points plotted as Vout (in volts) verses RFin (in volts peak). The measured Vout due to RFin = 0.0V peak being applied defined is a specification called Offset. 4/ Slope and intercept calculated using LSqR (Least Squared Regression) of seven test points: Inputs levels are 10dBm, 8dbm, 6.5dBm, 5dBm, 2dBm, -2dBm and -10dBm; which is equivalent to 1.0Vpk, 0.79Vpk, 0.67Vpk, 0.56Vpk, 0.40Vpk, 0.25Vpk and 0.10Vpk. ASD0016585 Rev. C | Page 6 of 8
Deviation vs. Temperature 2/ RFin = +10dBm 4,5,6 -1.2 1.2 (Deviation from output at 25°C) DevT dB 2/ RFin = -10dBm 4,5,6 -2.2 1.2 55°C < TA <+125°C Slope Slope 2/ 3/ 4/ LSqR of 7 points 4,5,6 1.7 3 V/ Vpeak Intercept Intercept 2/ 3/ 4/ LSqR of 7 points 4,5,6 -0.1 0.1 V 2/ RFin = +10 dB 4,5,6 1.9 3 Output Voltage Vout V 2/ RFin = -10 dB 4,5,6 0 0.35
Frequency = 40GHz Continuous Wave (CW) Input
Deviation vs. Temperature 2/ RFin = +10dBm 4,5,6 -1.2 1.2 (Deviation from output at 25°C) DevT dB 2/ RFin = -10dBm 4,5,6 -2.0 1.2 55°C < TA <+125°C Slope Slope 2/ 3/ 4/ LSqR of 7 points 4,5,6 1.6 3 V/ Vpeak Intercept Intercept 2/ 3/ 4/ LSqR of 7 points 4,5,6 -0.1 0.1 V 2/ RFin = +10 dBm 4,5,6 1.6 3 Output Voltage Vout V 2/ RFin = -10 dBm 4,5,6 0 0.35
Frequency = 43.5GHz Continuous Wave (CW) Input
Deviation vs. Temperature 2/ RFin = +10dBm 4,5,6 -1.2 1.2 (Deviation from output at 25°C) DevT dB 2/ RFin = -10dBm 4,5,6 -2.2 1.6 55°C < TA <+125°C Slope Slope 2/ 3/ 4/ LSqR of 7 points 4,5,6 1.5 2.6 V/ Vpeak Intercept Intercept 2/ 3/ 4/ LSqR of 7 points 4,5,6 -0.1 0.1 V 2/ RFin = +10 dBm 4,5,6 1.5 2.6 Output Voltage V Vout 2/ RFin = -10 dBm 4,5,6 0 0.25 Table II Notes: 1/ VPOS = 5.0 V, TA nom = 25ºC, TA max = 125ºC, and TA min = -55ºC, RFin = 50 Ω source impedance, unless otherwise noted. 2/ Parameter is part of device initial characterization which is only repeated after design and process changes or with subsequent wafer lots. Parameter is not tested post irradiation. 3/ The Intercept specification is defined as the calculated crossing point of the RFin = 0.0Vpk axis of a line defined by the calibration points plotted as Vout (in volts) verses RFin (in volts peak), not the 0 dBm axis crossing. The Slope specification is defined as the calculated slope of a line defined by the calibration points plotted as Vout (in volts) verses RFin (in volts peak). The measured Vout due to RFin = 0.0V peak being applied defined is a specification called Offset. 4/ Slope and intercept calculated using LSqR (Least Squared Regression) of seven test points: Inputs levels are 10dBm, 8dbm, 6.5dBm, 5dBm, 2dBm, -2dBm and -10dBm; which is equivalent to 1.0Vpk, 0.79Vpk, 0.67Vpk, 0.56Vpk, 0.40Vpk, 0.25Vpk and 0.10Vpk. ASD0016585 Rev. C | Page 6 of 8