Datasheet ADL6010S (Analog Devices) - 2
| Fabricante | Analog Devices |
| Descripción | Aerospace ADL6010S Fast Responding, 45 dB Range, 0.5 GHz TO 43.5 GHz Envelope Detector |
| Páginas / Página | 8 / 2 — ADL6010S. 3.3 Absolute Maximum Ratings 1/. 3.4 Radiation Features. 4.0. … |
| Revisión | C |
| Formato / tamaño de archivo | PDF / 199 Kb |
| Idioma del documento | Inglés |
ADL6010S. 3.3 Absolute Maximum Ratings 1/. 3.4 Radiation Features. 4.0. Die Qualification
Versión de texto del documento
ADL6010S 3.3 Absolute Maximum Ratings 1/
Supply voltage (VS) ... 5.5V Input radio frequency (RF) power .. 20 dBm 2/ Equivalent voltage, sine wave input ... 3.16 V Internal power dissipation (PD) .. 20 mW Junction temperature maximum (TJ) ... +150C Storage temperature range ... -65C to +150C Ambient operating temperature range (TA)………………….. -55C to +125C ESD Sensitivity (FICDM) .. 750 V (Class III) 3/ ESD Sensitivity (HBM) ... 500 V (Class 1B) 3/ Absolute Maximum Ratings Notes: 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Driven from a 50 source. 3/ ESD Caution: ESD (electrostatic discharge) sensitive device. Charged devices and circuit boards can discharge without detection. Although this product features patented or proprietary protection circuitry, damage may occur on devices subjected to high energy ESD. Therefore, proper ESD precautions should be taken to avoid performance degradation or loss of functionality.
3.4 Radiation Features
Maximum total dose available (dose rate = 50 – 300 rads(Si)/s)….100 k rads(Si) 1/ No Single Event latchup (SEL) occurs at Effective linear energy transfer (LET) : ≤ 80 MeV-cm2/mg 2/ Radiation Features Notes: 1/ These parts may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects. Radiation end point limits for the noted parameters are guaranteed only for the conditions specified in MIL-STD-883, method 1019, condition A. 2/ Limits are characterized at initial qualification and after any design or process changes that may affect the SEP characteristics, but are not production lot tested unless specified by the customer through the purchase order or contract. For more information on single event effect (SEE) test results, customers are requested to contact the manufacturer.
4.0 Die Qualification
In accordance with class-K version of MIL-PRF-38534, Appendix C, Table C-II, except as modified herein. (a) Qual Sample Size and Qual Acceptance Criteria – 25/2 (b) Pre-screen test post assembly required prior to die qualification, to remove all assembly related rejects.
Table I – Probe Test Electrical Performance Characteristics Conditions: V Limits Parameter Symbol pos = +5V Unit unless otherwise specified Min Max
Output Offset Voltage VOUT RFin = off -10 10 mV Supply Current ISY 1.3 2 mA ASD0016585 Rev. C | Page 2 of 8
Supply voltage (VS) ... 5.5V Input radio frequency (RF) power .. 20 dBm 2/ Equivalent voltage, sine wave input ... 3.16 V Internal power dissipation (PD) .. 20 mW Junction temperature maximum (TJ) ... +150C Storage temperature range ... -65C to +150C Ambient operating temperature range (TA)………………….. -55C to +125C ESD Sensitivity (FICDM) .. 750 V (Class III) 3/ ESD Sensitivity (HBM) ... 500 V (Class 1B) 3/ Absolute Maximum Ratings Notes: 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Driven from a 50 source. 3/ ESD Caution: ESD (electrostatic discharge) sensitive device. Charged devices and circuit boards can discharge without detection. Although this product features patented or proprietary protection circuitry, damage may occur on devices subjected to high energy ESD. Therefore, proper ESD precautions should be taken to avoid performance degradation or loss of functionality.
3.4 Radiation Features
Maximum total dose available (dose rate = 50 – 300 rads(Si)/s)….100 k rads(Si) 1/ No Single Event latchup (SEL) occurs at Effective linear energy transfer (LET) : ≤ 80 MeV-cm2/mg 2/ Radiation Features Notes: 1/ These parts may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects. Radiation end point limits for the noted parameters are guaranteed only for the conditions specified in MIL-STD-883, method 1019, condition A. 2/ Limits are characterized at initial qualification and after any design or process changes that may affect the SEP characteristics, but are not production lot tested unless specified by the customer through the purchase order or contract. For more information on single event effect (SEE) test results, customers are requested to contact the manufacturer.
4.0 Die Qualification
In accordance with class-K version of MIL-PRF-38534, Appendix C, Table C-II, except as modified herein. (a) Qual Sample Size and Qual Acceptance Criteria – 25/2 (b) Pre-screen test post assembly required prior to die qualification, to remove all assembly related rejects.
Table I – Probe Test Electrical Performance Characteristics Conditions: V Limits Parameter Symbol pos = +5V Unit unless otherwise specified Min Max
Output Offset Voltage VOUT RFin = off -10 10 mV Supply Current ISY 1.3 2 mA ASD0016585 Rev. C | Page 2 of 8