Datasheet IRF7832 (International Rectifier)
| Fabricante | International Rectifier |
| Descripción | HEXFET Power MOSFET |
| Páginas / Página | 10 / 1 — Applications. DSS. RDS(on) max. 30V. 4.0m. @VGS = 10V 34nC. Benefits. … |
| Formato / tamaño de archivo | PDF / 193 Kb |
| Idioma del documento | Inglés |
Applications. DSS. RDS(on) max. 30V. 4.0m. @VGS = 10V 34nC. Benefits. Absolute Maximum Ratings. Parameter. Max. Units. Thermal Resistance. Typ
Línea de modelo para esta hoja de datos
Versión de texto del documento
PD - 94594A IRF7832 HEXFET® Power MOSFET
Applications V
l Synchronous MOSFET for Notebook
DSS RDS(on) max Qg
Processor Power
30V 4.0m
:
@VGS = 10V 34nC
l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems A A 1 8 S D
Benefits
2 7 S D l Very Low RDS(on) at 4.5V VGS 3 6 l Ultra-Low Gate Impedance S D 4 l Fully Characterized Avalanche Voltage 5 G D and Current SO-8 Top View l 20V VGS Max. Gate Rating
Absolute Maximum Ratings Parameter Max. Units
VDS Drain-to-Source Voltage 30 V VGS Gate-to-Source Voltage ± 20 ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 20 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 16 A I Pulsed Drain Current c DM 160 PD @TA = 25°C Power Dissipation 2.5 W PD @TA = 70°C Power Dissipation 1.6 Linear Derating Factor 0.02 W/°C TJ Operating Junction and -55 to + 150 °C TSTG Storage Temperature Range
Thermal Resistance Parameter Typ. Max. Units
RθJL Junction-to-Drain Lead ––– 20 °C/W Rθ Junction-to-Ambient f JA ––– 50 Notes through are on page 10 www.irf.com 1 03/07/03
Applications V
l Synchronous MOSFET for Notebook
DSS RDS(on) max Qg
Processor Power
30V 4.0m
:
@VGS = 10V 34nC
l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems A A 1 8 S D
Benefits
2 7 S D l Very Low RDS(on) at 4.5V VGS 3 6 l Ultra-Low Gate Impedance S D 4 l Fully Characterized Avalanche Voltage 5 G D and Current SO-8 Top View l 20V VGS Max. Gate Rating
Absolute Maximum Ratings Parameter Max. Units
VDS Drain-to-Source Voltage 30 V VGS Gate-to-Source Voltage ± 20 ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 20 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 16 A I Pulsed Drain Current c DM 160 PD @TA = 25°C Power Dissipation 2.5 W PD @TA = 70°C Power Dissipation 1.6 Linear Derating Factor 0.02 W/°C TJ Operating Junction and -55 to + 150 °C TSTG Storage Temperature Range
Thermal Resistance Parameter Typ. Max. Units
RθJL Junction-to-Drain Lead ––– 20 °C/W Rθ Junction-to-Ambient f JA ––– 50 Notes through are on page 10 www.irf.com 1 03/07/03